[M-2-3] Impact of Silicon on Diamond Structure for Power-Supply on Chip Applications

K. Nakagawa¹, T. Kodama¹, S. Matsumoto¹, T. Yamada², M. Hasegawa², S. Nishizawa² (1.Kyushu Inst. of Tech., 2.The National Inst. Advanced Indus. Sci. and Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-2-4] Real Time Monitoring System for Internal Process to Failure of High Power IGBT

A. Watanabe¹, M. Tsukuda^1,2, I. Omura¹ (1.Kyushu Inst. of Tech., 2.The Int'l Centre for the Study of East Asian Development (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-2-5] Micro Dynamic Avalanche Phenomenon during Turn-off in Si-IGBTs

S. Machida¹, K. Ito¹, Y. Yamashita¹ (1.Toyota Central R&D Labs. Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-2-6] 1200V SC(Schottky Controlled Injection)-Diode - An Advanced Anode Concept for Low Injection Efficiency

T. Matsudai¹, T. Ogura¹, Y. Ohino¹, S. Misu¹, T. Kobayashi², K. Nakamura¹ (1.Toshiba Corp., 2.Toshiba I.S. Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-2-7] Suppression of Reverse Recovery Surge Voltage of Silicon Power Diode by Adjusting Trap Energy Levels through Local Lifetime Control

Y. Yamashita¹, S. Machida¹, T. Sugiyama¹ (1.Toyota Central R&D Labs., Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-3-1] Research and Development on Ga₂O₃ Power Devices

M. Higashiwaki¹, K. Sasaki^2,1, M.H. Wong¹, T. Kamimura¹, D. Krishnamurthy¹, A. Kuramata², T. Masui³, S. Yamakoshi² (1.National Inst. of Info. and Communications Tech., 2.Tamura Corp., 3.Koha Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-3-2] New Concept Power Device; Diamond Vacuum Switch

S. Yamasaki^1,2,3,4, D. Takeuchi^1,2,3, S. Koizumi^2,3,5, T. Makino^1,2,3, M. Ogura^1,2,3, H. Kato^1,2,3, H. Ohashi^1,2,3, H. Okushi^1,2,3 (1.AIST, 2.JST-ALCA, 3.JST-CREST, 4.Univ. of Tsukuba, 5.NIMS (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-3-3] Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC Epitaxial Wafers

O. Ishiyama¹, K. Yamada¹, H. Sako¹, K. Tamura¹, M. Kitabatake¹, J. Senzaki^1,2, H. Matsuhata^1,2 (1.R&D Partnership for Future Power Electronics Tech., 2.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-3-4] Characterization of a Basal-Plane Dislocation in 4H-SiC by X-Ray Three-Dimensional Topography and Transmission Electron Microscopy

R. Tanuma¹, D. Mori², H. Tsuchida¹ (1.Central Res. Inst. of Electric Power Industry, 2.Fuji Electric Co., Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-3-5] Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation

M. Kato¹, K. Yoshihara¹, M. Ichimura¹, T. Hatayama², T. Ohshima³ (1.Nagoya Inst. of Tech., 2.Nara Inst. of Sci. & Tech., 3.Japan Atomic Energy Agency (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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