[PS-6-25] The channel layer engineering using Al₂O₃ inter-layer in ZnO based TFTs

S.H. Kim¹, K.S. Jeong¹, H.J. Yun¹, S.D. Yang¹, Y.M. Kim¹, J.S. Kim¹, Y.U. Ko¹, J.U. An¹, H.D. Lee¹, G.W. Lee¹ (1.Chungnam National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-26] Implementation of Multi-threshold Voltage a-IGZO TFTs with Oxygen Plasma Treatment

X. He¹, L.Y. Wang¹, S.J. Li¹, M.S. Chan², S.D. Zhang^1,3 (1.Peking Univ., 2.Hong Kong Univ. of Science and Tech., 3.Shenzhen Graduate School, Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-27] Solution-Processed Ca-doped InZnO Oxide Semiconductor for Thin Film Transistor Applications

D. Liu^1,2, Y. Wang², Y.X. Yu², X. Gong², Y. Tian², Y.R. Wang², Z. Chen², D.D. Han², J.F. Kang² (1.Peking University Shenzhen Graduate School, 2.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-28L] Normally-off AlGaN/GaN MIS-HFET using stacked NiO/Al₂O₃ Gate Structure Formed by Atomic Layer Deposition

Y. Yamada¹, A. Suzuki¹, N. Otsuka¹, D. Ueda¹ (1.Panasonic Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-29L] AlGaN/GaN HEMTs on Silicon with Hybrid Source-Drain for Source-Drain Scaling and Frequency Dispersion Suppression

C.W. Tsou¹, Y.W. Lian¹, J.C. Hung¹, Y.S. Lin¹, S.H. Hsu¹ (1.National Tsing Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-30L] Electrical Characteristic of AlGaN/GaN HEMTS with AlN Spacer Layer

N.M. Shrestha¹, Y. Li¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-31L] Improved Breakdown Properties in Short Gate InP-based HEMTs with Novel Tri-Layer Channel Structure

A. El Moutaouakil¹, H. Sugiyama¹, H. Matsuzaki¹ (1.NTT Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-32L] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal

K. Moriguchi¹, T. Maemoto¹, K. Ogata¹, S. Sasa¹ (1.Osaka Institute of Technology (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-33L] GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology

M. Yokoyama¹, H. Yokoyama², M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.NTT Photonics Labs., NTT Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-1] Efficiency Improvement of GaN-Based LEDs with Double Nano-pattern

J.K. Huang¹, D.W. Lin¹, C.Y. Lee¹, H.W. Huang¹, P.T. Lee¹, H.C. Kuo¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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