[B-3-1] 3D dopant analysis in nano scale devices (FinFETs) by Atom Probe Tomography

A.K. Kambham^1,2, A. Kumar^1,2, W. Vandervorst^1,2 (1.Katholieke Univ. Leuven, 2.IMEC (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey^1,2,3, L. Veyre¹, H. Fontaine², V. Enyedi², K. Yckache², J. Guerrero², N. Chevalier², F. Martin², J.P. Barnes², F. Bertin², C. Durand⁴, M. Berthe⁴, B. Grandidier⁴, C. Thieuleux¹, C. Coperet^1,5 (1.C2P2, CPE Lyon, 2.CEA-LETI, 3.Osaka Univ., 4.IEMN, 5.ETH Zurich (France))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Size and Stress Effects in Ultraviolet Raman Spectra of Few-Nanometer-Thick SOI Nanofilms and Single Nanowires for Future CMOS Devices

V.D. Poborchii¹, T. Tada¹, Y. Morita¹, S. Migita¹, T. Kanayama¹, P. Geshev² (1.National Institute of Advanced Industrial Science and Tech., 2.Inst. of Thermophysics of the Russian Academy of Sciences (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution

T. Suwa¹, K. Nagata², H. Nohira³, K. Nakajima⁴, A. Teramoto¹, A. Ogura², K. Kimura⁴, T. Muro⁵, T. Kinoshita⁵, S. Sugawa¹, T. Hattori¹, T. Ohmi¹ (1.Tohoku Univ., 2.Meiji Univ., 3.Tokyo City Univ., 4.Kyoto Univ., 5.JASRI (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] Layer-by-Layer GeO₂ Formation in the Self-Limited Oxidation Regime of Ge

C.H. Lee^1,2, T. Nishimura^1,2, T. Tabata^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Modified Deal-Grove model for the thermal oxidation of Ge and Al₂O₃ capped Ge

S.K. Wang¹, X.L. Wang¹, L. Han^1,2, W. Zhao¹, B. Sun¹, W.W. Wang.¹, C. Zhao¹, H.G. Liu¹ (1.Inst. of Microelectronics, Chinese Academy of Sciences, 2.Southeast University (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Thermodynamic consideration and experimental demonstration for solving the problems of GeO₂ solubility in H₂O and GeO desorption from GeO₂/Ge

C. Lu^1,2, C.H. Lee^1,2, W.F. Zhang^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Charge neutrality level shift in the Bardeen limit of Fermi-level pinning at atomically flat Ge/metal interface

T. Nishimura^1,2, T. Nakamura¹, T. Yajima^1,2, K. Nagashil^1,2, A. Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate

T. Arahira¹, M. Fukudome¹, N. Taoka¹, W. Takeuchi¹, M. Sakashita¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization

Y. Yang¹, P. Guo¹, W. Wang¹, X. Gong¹, L. Wang¹, K.L. Low¹, G. Han¹, Y.C. Yeo¹ (1.National Univ. of Singapore (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF Download

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