[K-1-4] Dark Current Reduction for GeSn p-i-n Photodetectors using Low-Temperature Si Passivation

W. Wang¹, Y. Dong¹, G. Han¹, P. Guo¹, X. Gong¹, X. Xu¹, Q. Zhou¹, L. Wang¹, Z. Xu², W.K. Loke², S.F. Yoon², Y.C. Yeo¹ (1.National Uni. of Singapore, 2.Nanyang Technological Univ. (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-1-5] 15 μm-pitch Cu/Au Interconnections Relied on Self-aligned Low-temperature Thermosonic Flip-chip Bonding Technique for Advanced Chip Stacking Applications

T.T. Bui¹, F. Kato¹, N. Watanabe¹, S. Nemoto¹, K. Kikuchi¹, M. Aoyagi¹ (1.National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-1-6] Self-Assembly Study to Precisely Align Dies Having Microbump Covered with Non-Conductive Film for Advanced Chip-to-Wafer 3D Integration

Y. Ito^1,2, T. Fukushima¹, K.W. Lee¹, K. Choki², T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ., 2.Sumitomo Bakelike Co., Ltd. (Japan))

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[K-2-1] InP based 1.55 μm quantum dot materials and lasers for ultra-narrow linewidth applications

J.P. Reithmaier¹, V. Sichkovskyi¹, V. Ivanov¹, K. Kozhuharov¹, G. Eisenstein² (1.Univ. of Kassel, 2.Technion (Germany))

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[K-2-2] Telecom-Band InAs/GaAs Quantum Dot Lasers on Silicon Operating at 100 °C

K. Tanabe¹, T. Rae¹, K. Watanabe¹, Y. Arakawa¹ (1.Univ. Tokyo (Japan))

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[K-2-3] Broadband near-infrared superluminescent diode based on stacked multi-color InAs/GaAs quantum dots

N. Ozaki¹, T. Yasuda¹, S. Ohkouchi², E. Watanabe³, N. Ikeda³, Y. Sugimoto³, R.A. Hogg⁴ (1.Wakayama Univ., 2.NEC Corp., 3.NIMS, 4.Univ. of Sheffield (Japan))

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[K-2-4] A semiconductor optical amplifier consisting of highly stacked InAs quantum dots fabricated by using the strain-compensation technique

K. Akahane¹, N. Yamamoto¹, T. Umezawa¹, A. Kanno¹, T. Kawanishi¹ (1.National Inst. of Info. and Com. Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[K-2-5] High Density and High Aspect Ratio GaAs/AlGaAs Nanopillar array Fabricated by Fusion of Bio-Template and Neutral Beam Etching

Y. Tamura^1,6, A. Higo², T. KIba^3,6, W. Yunpeng⁴, C. Thomas^1,6, T. Okada¹, W. Hu^1,6, A. Murayama^3,6, M. Sugiyama⁵, Y. Nakano⁴, S. Samukawa^1,2,6 (1.Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.Hokkaido Univ., 4.RCAST, Univ. of Tokyo, 5.Univ. of Tokyo, 6.JST-CREST (Japan))

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[K-2-6] Trap Analysis of InGaN-based Blue Light Emitting Diodes using Current-Transient Methodology

G. Kim¹, E. Park¹, J.H. Kim¹, J.H. Bae¹, D.H. Kang², B.G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics, Corp., Ltd. (Korea))

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[K-3-1] High speed silicon modulators for integrated transceivers

G.T. Reed¹, D.J. Thomson¹, F.Y. Gardes¹, G.Z. Mashanovich¹, Y. Hu¹, K. Li¹, P.W. Wilson¹, L. Zimmermann², H. Porte³, B. Goll⁴, H. Zimmermann⁴, D. Knoll², S. Lischke², S.W. Chen⁵, S.S.H. Hsu⁵, J.M. Fedeli⁶, K. Debnath⁷, T.F. Krauss⁸, L. O'Faolain⁷ (1.Univ. of Southhampton, 2.IHP, 3.PHOTLINE Tech., 4.Vienna Univ. of Tech., 5.National Tsing Hua Univ., 6.CEA,LETI, 7.Univ. of St Andrews, 8.Univ. of York (UK))

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