[A-1-1] An Investigation on GIDL Mechanism of Program Disturbance in Sub-20nm NAND Flash Memory

Y.J. Jeong¹, I. Kim¹, D.H. Yoon¹, H.Y. Shim¹, M.K. Cho¹, K.O. Ahn¹, J.W. Kim¹ (1.SK Hynix (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Abnormal Cell-to-Cell Interference of NAND Flash Memory

Y.J. Kim¹, J.G. Kang¹, B. Lee², G.S. Cho², S.K. Park², W.Y Choi¹ (1.Univ. of Sogang, 2.SK Hynix (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Possibility of MONOS Type Memory for Long Lifespan Archive Memory

H. Shirakawa¹, K. Yamaguchi¹, K. Kamiya¹, K. Shiraishi^1,2 (1.Univ. of Tsukuba, 2.Nagoya Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] A Novel Approach for the Understanding of the Charge Loss Paths in a SONOS Flash Memory

J.H. Kuo¹, Y.H. Ho¹, S.S. Chung¹ (1.National Chiao Tung University (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels

K.H. Lee¹, H.C. Lin^1,2, T.Y. Huang¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Exploring the atomic structure of copper-doped Gd2O3 for the conductive bridging RAM technology

M. Lontsi Fomena¹, P. Blaise¹ (1.CEA, LETI (France))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Impact of overshoot current on SET operation of Atom Switch

T. Sakamoto¹, M. Tada¹, M. Miyamura¹, N. Banno¹, K. Okamoto¹, N. Iguchi¹, H. Hada¹ (1.LEAP (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] A New Lateral Conductive Bridge Random Access Memory (L-CBRAM) by Fully CMOS Logic Compatible Process

Y.C. Lin¹, Y.W. Chin¹, M.C. Hsieh¹, Y.D. Chih², K.H. Tsai³, M.J. Tsai³, Y.C. King¹, C.J. Lin¹ (1.National Tsing-Hua Univ., 2.Taiwan Semiconductor Manufacturing Company, 3.Industrial Technology Research Inst. (Taiwan))

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[A-2-4] Excellent Scalability Including Self-Heating Phenomena of Vertical-Channel Field-Effect-Diode (FED) Type Capacitorless One Transistor DRAM Cell

T. Imamoto^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Fluorine ion implantation optimization in Saddle-Fin array devices for sub-40-nm DRAM technology

K.L. Chiang^1,2, W.P. Lee^1,2, C.C. Lee¹, C.S. Sung¹, C.K. Wei^1,2, C.M. Yang^1,2, J.C. Wang², P. Kao¹, C.Y. Lee², H.H. Chen¹, C.Y. Hsiao¹, C.S. Lai² (1.Chang Gung Univ., 2.Inotera Memories Inc. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download