GaN HEMTs

H.S. Kang¹, C.H. Won¹, D.S. Kim¹, S.M. Jeon¹, Y.J. Kim¹, Y.M. Kwon¹, S. Vodapally¹, J.H. Kim¹, J.H. Lee¹, Y.S. Lee¹ (1.Kyungpook National Univ., 2.Samsung Electronics Corp. Ltd. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-4-4] Improved Current Collapse Phenomenon in AlGaN/GaN-on-Si HFETs Using Sacrificial GaO_x Process

J.G. Lee¹, S.W. Han¹, B.R. Park¹, K.S Seo², H. Kim¹, H.Y Cha¹ (1.Hongik Univ., 2.Seoul National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-5-1] Performance Characteristics and Applications for Second Generation SiC Power MOSFETs

J.W. Palmour¹, B. Hull¹, D. Gajewski¹, L. Cheng¹, J. Liu¹, S.T. Allen¹ (1.Cree, Inc. (USA))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-5-2] Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension

T. Okuda¹, H. Miyake¹, T. Kimoto¹, J. Suda¹ (1.Kyoto Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-5-3] OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

A. Tanaka¹, K. Nakayama¹, K. Asano¹, T. Miyazawa², H. Tsuchida² (1.Kansai Electric Power Co., Inc., 2.Central Res. Inst. of Electric Power Industry (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-5-4] Neutron Induced Single-Event Burnout in SiC Power Diode

T. Shoji^1,3, S. Nishida², K. Hamada², H. Tadano³ (1.Toyota Central R&D Labs., Inc., 2.Toyota Motor Corp., 3.Univ. of Tsukuba (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-5-5L] Evaluation of Fully Implanted Lightly Doped Drain (LDD) GaN-MISFET for Low Voltage and High Frequency Application

I. Kume¹, A. Tanabe¹, H. Takeda¹, S. Saito¹, N. Furutake¹, T. Hase¹ (1.Renesas Electronics Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-6-1] Recent developments in GaN HEMTs and MMICs for high power electronics

P. Waltereit¹, W. Bronner¹, P. Brückner¹, M. Dammann¹, R. Reiner¹, S. Müller¹, J. Kühn¹, M. Mußer¹, R. Quay¹, M. Mikulla¹, O. Ambacher¹ (1.Fraunhofer Inst. for Applied Solid State Physics (Germany))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-6-2] Electroluminescence under the gate region using AlGaN/GaN HEMT with a transparent gate electrode

T. Narita¹, Y. Fujimoto¹, A. Wakejima¹, T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-6-3] Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT

Y. Yamaguchi¹, K. Hayashi¹, T. Oishi¹, H. Otsuka¹, K. Yamanaka¹, Y. Miyamoto² (1.Mitsubishi Electric Corp., 2.Tokyo Tech (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (211 - 220)

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