[PS-1-12] Novel Sn-assisted Nitridation of Ge/HfO₂ Interface and Improved Electrical Properties of This MOS Capacitor

M. Zhao¹, R.R. Liang¹, J. Wang¹, J. Xu¹ (1.Tsinghua Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-13] Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode

A. Suzuki¹, S. Asaba¹, J. Yokoi¹, O. Nakatsuka¹, M. Kurosawa^1,2, K. Kato¹, M. Sakashita¹, N. Taoka¹, S. Zaima¹ (1.Nagoya Univ., 2.JSPS (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-14L] Residual Defects in Low-dose Arsenic Implanted Si after High-temperature Rapid Thermal Annealing: Their Behavior and Influence on CCD Image Sensors

A. Sagara¹, A. Uedono², N. Oshima³, R. Suzuki³, S. Shibata¹ (1.Panasonic Corp., 2.Univ. of Tsukuba, 3.National Inst. of Advanced Indus. Sci. and Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-3] Room Temperature Bonding of Heterogeneous Materials for Near-Infrared Image Sensor

T. Shuto¹, K. Iwanabe¹, M. Ogura², K. Nishida², T. Asano¹ (1.Kyushu Univ., 2.IRspec Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-4] Young Modulus of Si in 3D-LSIs and Reliability

M. Murugesan¹, J.C. Bea¹, T. Fukushima¹, K.W. Lee¹, T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-5] Self-Assembly and Electrostatic(SAE)Carrier Technology for Via-Last Backside-Via Multichip-to-Wafer 3D Integration

H. Hashiguchi¹, T. Fukushima¹, J.C. Bea¹, K.W. Lee¹, T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-6] Luminescence from SiO2 by Helium Ion Microscopy without any Damage Characterized by TEM-EELS

S. Ogawa¹, T. Iijima¹, R. Sugie², N. Kawasaki², Y. Otsuka² (1.Advanced Industrial Science and Technology (AIST), 2.Toray Research Center, Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-7] Stress Field and Defect Evaluation with Shallow Trench Isolation Structure after Transistor Fabrication Processing by Raman and Cathodoluminescence Spectroscopies

M. Kodera¹, N. Tsuchiya¹, S. Kakinuma², N. Naka² (1.Toshiba Corp., 2.Horiba, Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-8] Effects of Sputtering Gas on Formation of Ultrathin PtHfSi Film

Y. Yoshimura¹, S. Ohmi¹ (1.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-9] On-Chip Folded Dipole Antennas for Inter-Chip UWB Signal Transmission

K. Hashimoto¹, T. Sugitani¹, S. Kubota¹, T. Kikkawa¹ (1.Univ. of Hiroshima (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (371 - 380)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
Next »

▲