[M-4-1] A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

O.M.J. van `t Erve¹ (1.Naval Research Lab. (USA))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-4-2] Mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires

J. Ishihara¹, Y. Ohno², H. Ohno^1,3 (1.RIEC, Tohoku Univ., 2.Univ. of Tsukuba, 3.WPI-AIMR, Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-4-3] Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

K.R. Jeon^1,2, B.C. Min³, S.Y. Park⁴, K.D. Lee², H.S. Song², Y.H. Park³, Y.H. Jo⁴, S.C. Shin^2,5, H. Saito¹, S. Yuasa¹, R. Jansen¹ (1.AIST, 2.KAIST, 3.KIST, 4.KBSI, 5.DGIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-4-4] Effects of interface electric field on the magnetresitance in spin transistors

T. Tanamoto¹, M. Ishikawa¹, T. Inokuchi¹, H. Sugiyama¹, Y. Saito¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-5-1] Efficient spin injection in GaAs-based spin-LEDs through crystalline aluminum oxide layers

N. Nishizawa¹, H. Munekata¹ (1.Tokyo Inst. Of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-5-2] Marked difference in structural stability between Co₂FeSi/Si(111) and Co₂FeAl/Si(111) heterointerfaces in post-growth annealing conditions

S. Yamada¹, K. Tanikawa¹, S. Oki¹, M. Kawano¹, M. Miyao^1,2, K. Hamaya¹ (1.Kyushu Univ., 2.CREST-JST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-5-3] Co/Pt Multilayer Based Reference Layer in Magnetic Tunnel Junctions for Nonvolatile Spintronics VLSIs

H. Sato¹, S. Ikeda^1,2, S. Fukami¹, S. Ishikawa², M. Yamanouchi^1,2, K. Mizunuma², F. Matsukura^1,2,3, H. Ohno^1,2,3 (1.Center for Spintronics Integrated Systems, Tohoku Univ., 2.Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku Univ., 3.WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-5-4] Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Free Layer for Highly Sensitive Magnetic Sensor Devices

K. Fujiwara¹, D. Kato¹, M. Oogane¹, T. Nishikawa², H. Naganuma¹, Y. Ando¹ (1.Tohoku Univ., 2.KONICA MINOLTA (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-5-5] Anti-ferromagnetic Exchange Coupling in L10-MnGa/Co Bilayer Films

R. Ranjbar^1,2, S. Mizukami¹, A. Sugihara¹, Q.L. Ma¹, S. Iihama², Y. Ando², T. Miyazaki¹ (1.WPI Advanced Inst., Univ. of Tohoku, 2.Univ. of Tohoku (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[M-6-1] Electric field control of ferromagnetism in transition metals

D. Chiba¹ (1.The Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download