[PS-3-8] Impact of Extension Induced Fluctuation in FinFETs with Gate Underlap Structure

Y.J. Wang¹, P. Huang¹, Z. Xin¹, X.Y. Liu¹, G. Du¹, Y. Yang¹, J.F. Kang¹ (1.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-9] Shrinking Circuits Area with High-Mobility Channel MOSFETs

M. Ono¹, T. Tezuka¹ (1.GNC, AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-10] High Temperature Behavior of MR-DCIV Spectroscopy and Relationship with STI-based LDMOSFETs Reliability

Y.D. He¹, G.G. Zhang¹, Y. Yang¹, X. Zhang¹ (1.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-11] Understanding HCI Variability in Deeply Scaled nMOSFETs

L.J. Ma¹, X.L. Ji¹, Z.X. Chen², Y.M. Liao¹, F. Yan¹, Y.L. Song³, Q. Guo⁴ (1.Nanjing Univ., 2.SanDisk Info. Tech. Co. Ltd., 3.SMIC, 4.WXSMC (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-12] Effect of dynamic stress on OFF leakage of nanoscale pMOSFETs at high temperature

G.J. Kim¹, J.H. Seo¹, D. Son¹, S. Lee¹, C Kim¹, B. Kang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-13] Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors

M. Reiche¹, M. Kittler², H. Uebensee³ (1.Max Planck Inst. of Microstructure Physics, 2.IHP microelectronics, 3.CIS Res. Inst. of Microsensorics and Photovoltaics (Germany))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-14] Enhanced Subthreshold Slope and On-state Current in Tunneling Thin-Film-Transistors Using Metal Induced Lateral Crystallization

Y.H. Chen¹, L.C. Yen¹, T.S. Chang¹, T.Y. Chiang¹, P.Y. Kuo¹, T.S. Chao¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-15] Investigation of Tunneling FET Device Designs for Improving Circuit Switching Performance and Energy

Y.N. Chen¹, M.L. Fan¹, V.P.H. Hu¹, P. Su¹, C.T. Chuang¹ (1.National Chiao-Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-16] Layout Design Considering Electro-thermal Properties for CMOS Inverter Composed of Multi-pillar Vertical MOSFET

A. Wang^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-17] A Quasi-2D Compact Model for Trapezoidal FinFETs with Non-uniform Dopant Profiles Using the Perturbation Method

X. Feng¹, W. Kang¹, Q. Cheng¹, Y. Chen¹ (1.Shenzhen Graduate School, Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

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