[N-8-5L] Surface-Activated-Bonding Based InGaP-on-Si Double Junction Cells

N. Shigekawa^1,2, M. Morimoto¹, S. Nishida¹, J. Liang^1,2 (1.Osaka City Univ., 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-1-1] Atomically controlled diamond: homoepitaxy, doping, and surface structures

N. Tokuda^1,2,3, S. Yamasaki^2,3, T. Inokuma^1,3 (1.Kanazawa Univ., 2.AIST, 3.JST, CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-1-2] Groundbreaking room-temperature mobility of 2D holes in a strained Ge quantum well heterostructure grown by Reduced Pressure Chemical Vapor Deposition

M. Myronov¹, C. Morrison¹, C. Casteleiro¹, J. Halpin¹, S. Rhead¹, J. Foronda¹, D.R. Leadley¹ (1.Univ. of Warwick (UK))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-1-3] An Alternative Technique for GeOI Fabrication

C.T. Chung¹, G.L. Luo², C.W. Chen¹, C.H. Chien^1,2 (1.National Chiao-Tung Univ., 2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-1-4] Optimization of fabrication conditions of HfO₂/SiO₂/Si(100) and Y2O₃/SiO₂/Si(100) structures

Y. Toyoshima¹, S. Taniwaki¹, Y. Hotta^1,3, H. Yoshida^1,3, K. Arafune^1,3, A. Ogura^2,3, S. Sato^1,3 (1.Univ. of Hyogo, 2.Univ. of Meiji, 3.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-1-5] In-Situ Monitoring of Silicon Nanocrystal Deposition with Pulsed SiH₄ Supply by Optical Emission Spectroscopy of Ar Plasma

K. Ikemoto¹, Y. Nakamine¹, Y. Kawano¹, S. Oda¹ (1.Tokyo Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-1-6L] Fast fabricated the high quality Ge nanodot arrays on Si substrate

T.W. Liao¹, H.M. Chen¹, C.H. Kuan¹ (1.National Taiwan Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-2-1] Hybrid-Formation of Single-Crystalline Ge(Si, Sn)-on-Insulator Structures by Self-Organized Melting-Growth

M. Miyao¹, R. Matsumura¹, M. Kurosawa¹, K. Toko¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-2-2] Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth

R. Matsumura¹, R. Kato¹, Y. Tojo¹, T. Sadoh¹, M. Miyao¹ (1.Kyushu Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[P-2-3] Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

R.R. Lieten^1,2, T. Maeda³, W. Jevasuwan³, H. Hattori³, N. Uchida³, S. Miura⁴, M. Tanaka⁴, J.W. Seo¹, J.P. Locquet¹ (1.KU Leuven, 2.IMEC, 3.National Inst. for Advanced Indus. Sci. and Tech., 4.Yokohama National Univ. (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (331 - 340)

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