2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (811 - 820)

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[PS-11-11] Controlled Decoration of Double Junction N⁺/N^-/N⁺ Polysilicon Nanobelt Device with Platinum for Hydrogen Gas Sensor Application

^○N. A. Tran¹, C. H. Sang¹, F. M. Pan¹, J. T. Sheu¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-11-12L] Cross-Talk Immunity of Gold-Nanoparticle Incorporated PEDOT:PSS Pressure Sensors with 2×2 Cross-Point Array Structure

^○R. S. Karmakar¹, Y. Fu¹, S. H. Chen¹, J. C. Wang¹, Y. J. Lu², C. Y. Huang², K. C. Wei², C. S. Lai¹ (1.Chang Gung Univ., 2.Chang Gung Memorial Hospital(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-11-13L] Improvement of Filter-less Fluorescence Sensor by the Surface Planarization of Polysilicon Photogate

^○Y. J. Choi¹, K. Takahashi¹, M. Matsuda¹, T. Hizawa¹, Y. Moriwaki¹, F. Dasai¹, Y. Kimura¹, I. Akita¹, T. Iwata¹, M. Ishida¹, K. Sawada¹ (1.Toyohashi Univ. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-1] Anti-Damping Torque Engineering in Trilayer Spin-Hall System

^○G. Gupta¹, M. B. A. Jalil¹, G. Liang¹ (1.National Univ. of Singapore(Singapore))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-2] Enhancement of Gilbert Damping in Trilayer Synthetic Antiferromagnets via Dynamic Exchange Interactions

^○T. Chiba¹, G. E. W. Bauer^1,2,3, S. Takahasi¹ (1.IMR, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.Kavli Inst. of NanoScience, Delft Univ. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-3] A Pulse Current Synchronization Scheme for Spin Torque Nano Oscillators

^○K. Nakada¹, K. Miura², T. Kimura³ (1.Hiroshima City Univ., 2.Kwansei Gakuin Univ., 3.Kyushu Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-4] Spin Transport in Magnetic Tunnel Junctions with the Insertion of [6]Cyclo-2,7-naphthylenes Organic Semiconductor

^○K. Suzuki¹, T. Izumi^2,3, X. Zhang¹, A. Sugihara¹, S. T. Pham¹, H. Taka^2,3, S. Sato^1,2, H. Isobe^1,2, S. Mizukami¹ (1.Tohoku Univ., 2.JST-ERATO, 3.Konica Minolta Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-5] Bias Voltage Dependence of the Spin-dependent Tunneling Conductance of Co₂(Mn,Fe)Si-Based Magnetic Tunnel Junctions Exhibiting Giant Tunneling Magnetoresistances

^○K. Moges¹, B. Hu¹, H. x. Liu¹, T. Uemura¹, M. Yamamoto¹ (1.Hokkaido Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-6] Temperature Dependence of Spin-Dependent Tunneling Conductance of Magnetic Tunnel Junctions with Highly Spin-Polarized Electrodes

^○B. Hu¹, Kidist. Moges¹, H. x. Liu¹, Y. Honda¹, T. Uemura¹, M. Yamamoto¹ (1.Hokkaido Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-7] Exchange Bias Effects in Ni₂MnAl/Ferromagnet Film Bilayers

^○T. Kubota¹, T. Tsuchiya¹, T. Sugiyama¹, K. Takanashi¹ (1.Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (811 - 820)

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