2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (541 - 550)

[PS-12-14] Experimental Analysis of Shubnikov-De Haas Oscillation for Slightly Asymmetric InGaAs/InAlAs Double Quantum Wells

^○H. Chen¹, T. Matsuura¹, A. Sawada¹, T. Yamashige¹, B. Liu¹, H. Sugiyama², Y. Sekine², T. Koga¹ (1.Hokkaido Univ., 2.NTT Corp.(Japan))

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[PS-12-15] Real Space Analysis of Classical Diffusion and Weak Localization of Electrons in Mesoscopic Systems from Boltzmannian Picture

^○A. Sawada¹, T. Koga¹ (1.Hokkaido Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-12-16] Electron G-factor Engineering in GaAs Quantum Nano-Disks Fabricated by Defect-Free Neutral Beam Etching Process

^○Y. C. Tsai¹, L. W. Yang¹, Y. Li¹, O. Voskoboynikov¹, A. Higo², A. Murayama³, S. Samukawa² (1.National Chiao Tung Univ., 2.Tohoku Univ., 3.Hokkaido Univ.(Taiwan))

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[PS-12-17] Transient Analysis of Oblique Hanle Signals Observed in GaAs

^○Z. C. Lin¹, M. Yamamoto¹, T. Uemura¹ (1.Hokkaido Univ.(Japan))

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[PS-12-18] Influence of Si Surface on Spin Accumulation and Transport Signals in CoFe/MgO/n⁺-Si Junctions

^○M. Ishikawa¹, H. Sugiyama¹, T. Inokuchi¹, K. Hamaya², N. Tezuka³, Y. Saito¹ (1.Toshiba Corp., 2.Osaka Univ., 3.Tohoku Univ.(Japan))

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[PS-12-19] Temperature Dependences of Spin-injection Dynamics and Spin-polarized Electroluminescence in InGaAs Quantum Dots

^○Y. Nomura¹, Y. Akei¹, J. Takayama¹, T. Kiba², A. Subagyo¹, T. Yamamura¹, D. Yamazaki¹, K. Sueoka¹, A. Murayama¹ (1.Hokkaido Univ., 2.Kitami Inst. of Tech.(Japan))

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[PS-12-20] Spin Depolarization Induced by Low Electric Fields in Undoped InGaAs/AlGaAs Multiple Quantum Well

^○Y. H. Chen¹, L. P. Zhu¹, Y. Liu¹ (1.Inst. of Semiconductors, CAS(China))

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[PS-13-1] Direct Observation of Evolution in Graphene Layers by Electrical Properties

^○C. W. Huang¹, J. Y. Chen¹, W. W. Wu¹ (1.National Chiao Tung Univ.(Taiwan))

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[PS-13-2] Bandgap Engineering of Graphene by Mean of Adsorption of Defective Graphene

^○K. Kishimoto¹, S. Okada¹ (1.Univ.of Tsukuba(Japan))

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[PS-13-3] Al₂O₃/HfO₂/Al₂O₃/Graphene Charge Trap Flash Device with a Self-aligned Gate

^○K. H. Lee¹, O. H. Kim¹ (1.POSTECH(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (541 - 550)