[K-2-5L] Investigation of FOM of Tunnel FET Devices and OTA Design for Analog/Mixed-Signal Applications

^○Y. N. Chen¹, P. Su¹, J. C. S. Woo², C. T. Chuang¹ (1.NCTU, 2.UCLA(Taiwan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 5:35 PM - 5:50 PM |PDF Download

[K-3-1] (Invited) Impacts of RDF, RTN, and Shot Noise on Nanowire Transistor Performance Studied by Ensemble Monte Carlo / Molecular Dynamics Simulation

^○T. Watanabe (1.Waseda Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:00 AM - 9:30 AM |PDF Download

[K-3-2] Effect of 3D Current Distribution in the Characterizing Parasitic Resistance of FinFETs

^○P. Y. Lin¹, Y. L. Chiu¹, F. H. Meng¹, K. H. Chen², S. Hao², B. Z. Tien², T. S. Chang², C. J. Lin¹, Y. C. King¹ (1.National Tsing Hua Univ., 2.TSMC(Taiwan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:30 AM - 9:50 AM |PDF Download

[K-3-3] Quantitative Understanding of Scanning Spreading Resistance Microscopy with Schottky Contact Model

^○S. Itai¹, L. Zhang¹, K. Matsuzawa¹, M. Ono¹, T. Ishihara¹ (1.Toshiba Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:50 AM - 10:10 AM |PDF Download

[K-3-4] Assessment of GIDL Reduction and Vth Modulation with Plasma Doped FinFETs

^○J. M. Lee^1,2, K. H. Cho², H. J. Bae², D. W. Kim², S. Paak², I. Chung¹ (1.Sungkyunkwan Univ., 2.Samsung Electronics Co. Ltd(Korea))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:10 AM - 10:30 AM |PDF Download

[K-4-1] (Invited) High Performance 14nm SOI FinFET Technology

^○C. -H. Lin (1.IBM(USA))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 3:40 PM - 4:10 PM |PDF Download

[K-4-2] Stacked-Nanowire and FinFET Transistors: Guidelines for the 7nm Node

^○L. Gaben¹, S. Barraud², M. A. Jaud², S. Martinie², O. Rozeau², J. Lacord², G. Hiblot¹, S. Monfray¹, F. Boeuf¹, T. Skotnicki¹, F. Balestra³, M. Vinet² (1.STMicroelectronics, 2.CEA-LETI, 3.IMEP-LAHC(France))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 4:10 PM - 4:30 PM |PDF Download

[K-4-3] W and Copper Interconnection Stability for 3D VLSI CoolCube Integration

C. Fenouillet Beranger¹, S. Kerdiles¹, F. Deprat^1,3, P. Batude¹, M. P. Samson^2,1, B. Previtali¹, N. Rambal^1,2, V. Lapras^1,2, L. Emery², C. Euvrard Colnat¹, A. Seignard^1,2, P. Besson^2,1, KachtouliR. ¹, A. Roman^2,1, C. Ribiere¹,^○V. Lu^2,1, L. Brunet¹, E. Gourvest², G. Druais², Y. Loquet², L. Arnaud¹, Y. Le Friec², O. Pollet¹, V. Benevent¹, F. Aussenac¹, H. Denis¹, V. Jousseaume¹, S. Maitrejean¹, M. Vinet¹ (1.CEA-LETI, 2.STMicroelectronics, 3.IMEP(France))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 4:30 PM - 4:50 PM |PDF Download

[K-5-1] Transistor-level Characterization of SRAM Bit Failures Induced by Random Telegraph Noise

^○T. Mizutani¹, T. Saraya¹, K. Takeuchi¹, M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 5:25 PM - 5:45 PM |PDF Download

[K-5-2] 1⁄f Noise in Submicron Top-Gate Crystalline Oxide Semiconductor FET

^○A. Hirose¹, T. Aoki¹, S. Maeda¹, F. Akasawa¹, Y. Kurokawa¹, T. Ikeda¹, M. Tsubuku¹, T. Ishihara¹, Y. Kobayashi¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co. Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 5:45 PM - 6:05 PM |PDF Download