2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (731 - 740)

[PS-7-2] Performance Enhancement of Blue InGaN Light-Emitting Diodes with p-InGaN/GaN SPS Last Barrier and p-AlGaN/GaN SPS EBL

P. K. Lin¹, ^○C. K. Wang¹, Y. Z. Chiou¹, S. B. Chang², S. J. Chang² (1.Southern Taiwan Univ. of Sci. and Tech., 2.National Cheng Kung Univ.(Taiwan))

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[PS-7-3] Enhanced Light Intensity of InGaN-based LEDs Grown on Molybdenum Patterned Sapphire Substrates

W. H. Wu¹, ^○Y. H. You², V. C. Su², M. L. Lee², P. H. Chen², C. H. Kuan², R. M. Lin¹ (1.Chang Gung Univ., 2.National Taiwan Univ.(Taiwan))

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[PS-7-4] A Narrow-band Short Wavelength Type II InAs/GaSb Superlattices Photodetector with High Performance

^○J. L. Huang^1,2, W. Q. Ma¹, Y. H. Zhang¹, Y. L. Cao¹, K. Liu¹, J. W. Huang¹, S. L. Lu² (1.Inst. of Semiconductors, Chinese Academy of Sci., 2.Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Academy of Sci.(China))

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[PS-7-5] Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas

^○H. A. Chen^1,2, T. C. Shih¹, H. Y. Chen³, S. Y. Lin^1,2,3 (1.Academia Sinica, 2.National Taiwan Univ., 3.National Taiwan Ocean Univ.(Taiwan))

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[PS-7-6] Low-resistivity Lateral PIN Junction Formed by Ni-InGaAsP Alloy for Carrier-Injection InGaAsP Photonic Devices

^○J. K. Park^1,2, M. Takenaka^1,2, S. Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

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[PS-7-7] Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with Segmented Contacts

^○N. Ozaki^1,2, T. Yasuda¹, H. Shibata¹, H. Ohsato³, E. Watanabe³, N. Ikeda³, Y. Sugimoto³, D. T. D. Childs², R. A. Hogg² (1.Wakayama Univ., 2.Univ. of Sheffield, 3.NIMS(Japan))

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[PS-7-8] Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure

^○F. Gao¹, S. Luo¹, H. M. Ji¹, T. Yang¹ (1.Inst. of Semiconductors, Chinese Academy of Sciences(China))

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[PS-7-9] Photoconductivity with 1.55 μm Excitation of InAs QDs Embedded in InGaAs Barriers on GaAs Substrate

^○K. Murakumo¹, Y. Yamaoka¹, N. Kumagai¹, T. Kitada¹, T. Isu¹ (1.Tokushima Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-10] Coupling Structures between Crystal/Amorphous Si Waveguides for In-Plane Integration

^○K. Itoh¹, Y. Kuno¹, J. Kang¹, Y. Hayashi¹, J. Suzuki¹, T. Amemiya¹, N. Nishiyama¹, S. Arai¹ (1.Tokyo Tech(Japan))

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[PS-7-11] Photosensing in MOS(p) and MOS(n) Photodiodes

^○C. T. Yang¹, J. G. Hwu¹ (1.National Taiwan Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (731 - 740)