2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (701 - 710)

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[PS-5-11] Design and Characteristics of a MEMS Human Body Hardness Sensor Aimed to Diagnosis of Lesion Size

^○Y. Maeda¹, K. Terao¹, F. Shimokawa¹, H. Takao¹ (1.Kagawa Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-12] CMOS Temperature Sensor Using a Modified Bandgap Reference Voltage Circuit with a Low-Temperature-Coefficient Resistor Structure

R. L. Wang¹, ^○J. L. Shi¹, Y. F. Hao¹, K. B. Lee¹, X. J. Yang¹, W. D. Wu¹, H. H. Liao², H. H. Tsai², Y. Z. Juang² (1.National Kaohsiung Normal Univ., 2.National Applied Research Labs.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-1] Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink

^○Y. T. Kim¹, J. H. Lee², Y. M. Jhon¹ (1.Korea Inst. of Sci. & Tech., 2.Kyungpook National Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-2] Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO₂/La₂O₃ Gate Insulator for High Power Application

Y. X. Huang¹, W. C. Shih¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La₂O₃/SiO₂ Gate Dielectric

W. C. Shih¹, H. H. Hsu¹, Y. X. Huang¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-4] Thermal Stability of the Interface between Atomic Layer Deposited High-k ZrO₂ and GaN

^○H. Wang^1,2, G. Ye¹, K. S. Ang² (1.Nanyang Technological Univ., 2.Temasek Laboratories@NTU(Singapore))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-5] Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

^○H. S. Lee^1,2, D. Y. Jung¹, Y. R. Park¹, J. H. Na¹, H. G. Jang¹, H. Lee¹, C. H. Jun¹, J. B. Park¹, Z. S. Kim¹, J. K. Mun¹, S. O. Ryu², S. C. Ko¹, NamE. S. ¹ (1.Electronics and Telecommunications Res. Inst., 2.Dankook Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-6] Electrolyte Electro-Reflectance Spectra of Crack-Free AlGaN/GaN High Electron Mobility Transistors on Si Substrate

^○T. S. Ko¹, B. Y. Hu¹, N. W. Chang¹, D. Y. Lin¹, J. S. Li² (1.National Univ. of Changhua Edu., 2.Feng Chia Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-7] Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement

^○C. C. Liu¹, Y. X. Huang¹, W. C. Shih¹, H. H. Hsu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-8] The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using Stacking AlN Protection Layers

^○A. J. Tzou¹, D. H. Hsieh¹, J. K. Huang¹, C. J. Su², Z. Y. Li^1,3, C. Y. Chang^1,4, H. C. Kuo¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.Epistar Inc., 4.Academia Sinica(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (701 - 710)

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