2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

Search Criteria
Search Filters

894 results (421 - 430)

[PS-6-5] Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

^○H. S. Lee^1,2, D. Y. Jung¹, Y. R. Park¹, J. H. Na¹, H. G. Jang¹, H. Lee¹, C. H. Jun¹, J. B. Park¹, Z. S. Kim¹, J. K. Mun¹, S. O. Ryu², S. C. Ko¹, NamE. S. ¹ (1.Electronics and Telecommunications Res. Inst., 2.Dankook Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-6] Electrolyte Electro-Reflectance Spectra of Crack-Free AlGaN/GaN High Electron Mobility Transistors on Si Substrate

^○T. S. Ko¹, B. Y. Hu¹, N. W. Chang¹, D. Y. Lin¹, J. S. Li² (1.National Univ. of Changhua Edu., 2.Feng Chia Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-7] Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement

^○C. C. Liu¹, Y. X. Huang¹, W. C. Shih¹, H. H. Hsu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-8] The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using Stacking AlN Protection Layers

^○A. J. Tzou¹, D. H. Hsieh¹, J. K. Huang¹, C. J. Su², Z. Y. Li^1,3, C. Y. Chang^1,4, H. C. Kuo (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.Epistar Inc., 4.Academia Sinica(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-9] [No-show]High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers

^○C. Y. Lee¹, Y. P. Lan², Y. S. Gau³, C. H. Chen³, R. M. Lin³, C. Y. Chang^1,2 (1.Academia Sinica, 2.National Chiao Tung Univ., 3.Chang Gung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials

[PS-6-10] 2-Dimentional Characterization of Ion-Implantation Damage in GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, S. Murase¹, S. Yamamoto¹, T. Mishima², T. Nakamura² (1.Univ. of Fukui, 2.Hosei Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-11] DC Characteristics in Nearly Lattice-Matched InAlN/AlGaN Heterostructure Field-Effect Transistors

^○T. Tsutsumi¹, G. Nishino¹, J. Freedsman¹, M. Miyoshi¹, T. Egawa¹ (1.Nagoya Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-12] High-Quality PECVD SiO₂ Gate Oxide for Use in Normally-Off AlGaN/GaN Recessed MOS-HFETs

^○H. S. Kim¹, J. G. Lee², S. H. Park¹, S. W. Han¹, K. S. Seo³, H. Y. Cha¹ (1.Hongik Univ., 2.Univ. of Texas at Dallas, 3.Seoul National Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-13] Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al₂O₃/AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates

^○T. Kubo¹, M. Miyoshi¹, T. Egawa¹ (1.Nagoya Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-14] High Thermal Stability AlGaN/GaN Schottky Barrier Diode with Diamond-Like Carbon (DLC) Heat Dissipation Anode Design

^○Y. H. Cheng¹, H. Y. Wang¹, L. Y. Peng¹, H. C. Chiu¹ (1.Chang Gung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (421 - 430)