2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (411 - 420)

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[PS-5-7] Batteryless Transmitter for Biomedical Implant

^○H. C. Chen¹, C. Y. Kao¹, S. C. Yang¹ (1.National Taiwan Univ. of Sci. and Tech.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-8] A Fully On-Chip Switched-Capacitor DC-DC Power Converter with Startup/Fail-Safe Circuit

^○Y. Kojima¹, T. Hirose¹, K. Tsubaki¹, T. Ozaki¹, H. Asano¹, N. Kuroki¹, M. Numa¹ (1.Kobe Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-9] A Fully Integrated Boost Power Supply with On-Chip Photovoltaic Device

^○A. Watanabe¹, D. Orihara¹, Y. Minami¹, N. Nakano¹ (1.Keio Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-10] Discharging-Phototransistor-Integrated High-Voltage Si Photovoltaic Cells for Fast Driving of an Electrostatic MEMS Actuator by Wavelength Modulation

^○I. Mori¹, Y. Mita¹ (1.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-11] Design and Characteristics of a MEMS Human Body Hardness Sensor Aimed to Diagnosis of Lesion Size

^○Y. Maeda¹, K. Terao¹, F. Shimokawa¹, H. Takao¹ (1.Kagawa Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-12] CMOS Temperature Sensor Using a Modified Bandgap Reference Voltage Circuit with a Low-Temperature-Coefficient Resistor Structure

R. L. Wang¹, ^○J. L. Shi¹, Y. F. Hao¹, K. B. Lee¹, X. J. Yang¹, W. D. Wu¹, H. H. Liao², H. H. Tsai², Y. Z. Juang² (1.National Kaohsiung Normal Univ., 2.National Applied Research Labs.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-1] Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink

^○Y. T. Kim¹, J. H. Lee², Y. M. Jhon¹ (1.Korea Inst. of Sci. & Tech., 2.Kyungpook National Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-2] Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO₂/La₂O₃ Gate Insulator for High Power Application

Y. X. Huang¹, W. C. Shih¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La₂O₃/SiO₂ Gate Dielectric

W. C. Shih¹, H. H. Hsu¹, Y. X. Huang¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-4] Thermal Stability of the Interface between Atomic Layer Deposited High-k ZrO₂ and GaN

^○H. Wang^1,2, G. Ye¹, K. S. Ang² (1.Nanyang Technological Univ., 2.Temasek Laboratories@NTU(Singapore))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (411 - 420)

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