2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (481 - 490)

[PS-8-16] Topography and Atomic Strain Deformation of Epitaxial Graphene on Si-terminated 6H-SiC Extended to the Few Microns Order

^○G. Rius¹, N. Mestres², Y. Tanaka¹, O. Eryu¹, P. Godignon³ (1.Nagoya Inst. of Tech., 2.ICMAB-CSIC, 3.IMB-CNM-CSIC(Japan))

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[PS-8-17] Synthesis of Si-based Nanostructures by Extraction of Metallic Atoms from Silicides by Inositol Hexakisphosphate

^○K. Sasaki¹, K. Sano¹, X. Meng¹, H. Suzuki¹, T. Kobayashi², T. Kuno³, H. Tatsuoka¹ (1.Shizuoka Univ., 2.Koba Technology, 3.Kankyo Science(Japan))

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[PS-8-18] Temperature Dependence of Electrical Transport Properties of La₄BaCu_5-xCo_xO_13+δ Conducting Oxide Thin Films

^○A. Tsuruta¹, Y. Tsujioka², Y. Yoshida², I. Terasaki^1,2, W. Shin¹ (1.AIST, 2.Nagoya Univ.(Japan))

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[PS-8-19] Solvent Effect on Zinc Oxide Crystallites Shape using Submerged Photo-Synthesis

^○M. Jeem¹, K. Kawaguchi¹, A. M. R. Hamzah¹, J. Ishioka¹, S. Yatsu¹, T. Shibayama¹, S. Watanabe¹ (1.Hokkaido Univ.(Japan))

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[PS-8-20] Study on Thermal Durability of AZO/Ag(Al)/AZO Transparent Conductive Film

^○Y. Sugimoto¹, K. Igarashi¹, A. Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center(Japan))

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[PS-8-21] Study on Microstructure of Gd₂O₃ and Nd₂O₃ Compound Film Formed by RF Magnetron Sputtering

^○Z. Wang¹, L. Xiao¹, J. Wang¹ (1.Tsinghua Univ.(China))

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[PS-8-23] Epitaxial Growth of Yttrium Monoxide Thin Film

^○K. Kaminaga^1,2, R. Sei^1,2, T. Fukumura^2,3, T. Hasegawa^1,3 (1.Univ. Tokyo, 2.Tohoku Univ., 3.JST-CREST(Japan))

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[PS-8-24] Behavior of Si Atoms, Ge Atoms and Vacancies for Flash Lamp Annealing

^○A. Heya¹, N. Matsuo¹, S. Hirano¹, Y. Nakamura², T. Yokomori², M. Yoshioka² (1.Univ. of Hyogo, 2.USHIO Inc.(Japan))

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[PS-8-25] Low Temperature Liquid Phase Epitaxy of YBa₂Cu₃O_Y Films by the Molten KOH Method

^○S. Funaki¹, Y. Yamada¹, R. Okunishi¹, Y. Miyachi¹ (1.Shimane Univ.(Japan))

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[PS-8-26] Thermoelectric Properties of Yb_xFe_yCo_4-ySb₁₂ Prepared under High Pressure

^○Y. Chen¹, Y. Kawamura¹, C. Sekine¹ (1.Muroran Inst. of Tech.(Japan))

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894 results (481 - 490)