2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (441 - 450)

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[PS-6-25L] Design of Drain for Low off Current in GaAsSb/InGaAs Tunnel FETs

^○S. Iwata¹, W. Lin¹, K. Fukuda^1,2, Y. Miyamoto¹ (1.Tokyo Tech, 2.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-26L] Low-noise Performance of Pseudomorphic InGaAs/InAlAs HEMTs

^○I. Watanabe¹, A. Endoh^1,2, T. Mimura^1,2, A. Kasamatsu¹ (1.NICT, 2.Fujitsu Labs.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-27L] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

^○A. Endoh^1,2, I. Watanabe¹, A. Kasamatsu¹, T. Takahashi², S. Shiba², Y. Nakasha², T. Iwai², T. Mimura^1,2 (1.NICT, 2.Fujitsu Labs.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-1] GaN Metal-Insulator-Semiconductor Ultraviolet Detectors with Lanthanum Fluoride (LaF₃) Insulating Layers

^○C. H. Chen¹, C. F. Cheng¹ (1.Cheng Shiu Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-2] Performance Enhancement of Blue InGaN Light-Emitting Diodes with p-InGaN/GaN SPS Last Barrier and p-AlGaN/GaN SPS EBL

P. K. Lin¹, ^○C. K. Wang¹, Y. Z. Chiou¹, S. B. Chang², S. J. Chang² (1.Southern Taiwan Univ. of Sci. and Tech., 2.National Cheng Kung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-3] Enhanced Light Intensity of InGaN-based LEDs Grown on Molybdenum Patterned Sapphire Substrates

W. H. Wu¹, ^○Y. H. You², V. C. Su², M. L. Lee², P. H. Chen², C. H. Kuan², R. M. Lin¹ (1.Chang Gung Univ., 2.National Taiwan Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-4] A Narrow-band Short Wavelength Type II InAs/GaSb Superlattices Photodetector with High Performance

^○J. L. Huang^1,2, W. Q. Ma¹, Y. H. Zhang¹, Y. L. Cao¹, K. Liu¹, J. W. Huang¹, S. L. Lu² (1.Inst. of Semiconductors, Chinese Academy of Sci., 2.Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Academy of Sci.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-5] Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas

^○H. A. Chen^1,2, T. C. Shih¹, H. Y. Chen³, S. Y. Lin^1,2,3 (1.Academia Sinica, 2.National Taiwan Univ., 3.National Taiwan Ocean Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-6] Low-resistivity Lateral PIN Junction Formed by Ni-InGaAsP Alloy for Carrier-Injection InGaAsP Photonic Devices

^○J. K. Park^1,2, M. Takenaka^1,2, S. Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-7] Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with Segmented Contacts

^○N. Ozaki^1,2, T. Yasuda¹, H. Shibata¹, H. Ohsato³, E. Watanabe³, N. Ikeda³, Y. Sugimoto³, D. T. D. Childs², R. A. Hogg² (1.Wakayama Univ., 2.Univ. of Sheffield, 3.National Inst. Materials Sci.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (441 - 450)

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