2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (621 - 630)

[RS-B-1] Future materials and devices for solar-based energy systems: from power generation to energy storage

Moderator:Masakazu Sugiyama¹
Panelists:Hiroji Ebe², Mutsuko Hatano³, Takashi Iwasaki⁴, Kazuhiro Ohkawa⁵ (1.The University of Tokyo, 2.Fujitsu Labs. Ltd., 3.Tokyo Institute of Technology, 4. Sumitomo Electric Industries Ltd., 5.Tokyo University of Science)

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 7:10 PM - 8:40 PM

[PS] Poster Session

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 1:30 PM - 3:30 PM

[PS-1-1] Low Interface Trap Density in In_0.53Ga_0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO₂/ La₂O₃ High-κ Dielectrics

T. W. Lin¹, ^○J. N. Yao¹, Y. C. Lin¹, K. C. Yang¹, W. H. Wu¹, K. Kakushima², J. S. Maa¹, E. Y. Chang¹, H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-2] Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO₂/In_0.53Ga_0.47As MOSCAPs for Low EOT and Low Interface State Densit

^○Q. H. Luc¹, H. B. Do¹, S. P. Cheng¹, J. H. Chen¹, S. H. Huynh¹, P. C. Chang¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-3] \"Improving Performance of In_0.53Ga_0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N₂/H₂ Gases

^○Q. H. Luc¹, S. P. Cheng¹, J. H. Chen¹, G. Y. Lin¹, H. B. Do¹, P. C. Chang¹, G. W. Huang¹, K. M. Chen¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-4] Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx Interfacial Layer using Plasma Enhanced Atomic Layer Deposition

^○S. K. Eom¹, R. S. Ki¹, D. H. Kim¹, H. Y. Cha², K. S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-5] Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using Ferroelectric Gate

^○M. H. Lee¹, C. Liu¹, P. G. Cheng¹, C. C. Cheng¹, K. Y. Chu¹, M. J. Xie¹, S. N. Liu¹, J. W. Lee¹, S. J. Huang¹, M. H. Liao² (1.National Taiwan Normal Univ., 2.National Taiwan Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-6] Fabrication of Low-Temperature (< 400 °C) Germanium MOSCAPs by Microwave Thermal Oxidation

^○W. C. Chi¹, C. C. Hsu^1,2, C. H. Chou¹, A. S. Shih¹, Y. J. Lee², C. H. Chien¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-7] High-Performance P-Channel Polycrystalline-Germanium Thin Film Transistors via Excimer Laser Crystallization and Counter Doping

^○C. Y. Liao¹, C. Y. Huang¹, M. H. Huang¹, C. H. Chou¹, H. C. Cheng¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-8] UV Raman and Multiwavelength Photoluminescence Characterization of Ion Implanted Silicon for In-Line Dopant Activation Process Monitoring Applications

^○W. S. Yoo¹, T. Ishigaki¹, T. Ueda¹, K. Kang¹, N. Hasuike², H. Harima², M. Yoshimoto² (1.WaferMasters, Inc., 2.Kyoto Inst. of Tech.(USA))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (621 - 630)