2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (331 - 340)

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[P-3-1] (Invited) Graphene as a Versatile Spin Tunnel Barrier

^○E. Cobas (1.US Naval Res. Lab.(USA))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:00 AM - 9:30 AM |PDF Download

[P-3-2] Suppression of Spin Transport in Ferromagnet/Oxide/Semiconductor Junctions by Inserting Magnetic Impurities

^○A. Spiesser¹, H. Saito¹, S. Yuasa¹, R. Jansen¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:30 AM - 9:45 AM |PDF Download

[P-3-3] Phonon-Assisted Efficient Spin Injection in InGaAs Quantum Well-Quantum Dot Tunnel-Coupled Structures

^○S. L. Chen¹, T. Kiba², J. Takayama¹, A. Murayama¹ (1.Hokkaido Univ., 2.Kitami Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 9:45 AM - 10:00 AM |PDF Download

[P-3-4] Magnetic Properties and Intrinsic Ferromagnetism in Narrow-gap Ferromagnetic Semiconductor (Ga,Fe)Sb

^○N. T. Tu¹, P. N. Hai², L. D. Anh¹, M. Tanaka¹ (1.Univ. Tokyo, 2.Tokyo Tech(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:00 AM - 10:15 AM |PDF Download

[P-3-5] Millimeter-Wave Detector Using Magnetic Tunnel Junctions With Perpendicularly Magnetized L1₀-Ordered FePd Free Layer

^○K. Mukaiyama¹, H. Naganuma¹, T. Yu¹, H. Kubota², A. Fukushima², M. Oogane¹, Y. Ando¹ (1.Tohoku Univ., 2.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:15 AM - 10:30 AM |PDF Download

[P-3-6] Generation of Highly Stable Microwave from a Spin Torque Oscillator by Phase Locked Loop

^○S. Tamaru¹, H. Kubota¹, K. Yakushiji¹, S. Yuasa¹, A. Fukushima¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 10:30 AM - 10:45 AM |PDF Download

[PS-1-1] Low Interface Trap Density in In_0.53Ga_0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO₂/ La₂O₃ High-κ Dielectrics

T. W. Lin¹, ^○J. N. Yao¹, Y. C. Lin¹, K. C. Yang¹, W. H. Wu¹, K. Kakushima², J. S. Maa¹, E. Y. Chang¹, H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-2] Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO₂/In_0.53Ga_0.47As MOSCAPs for Low EOT and Low Interface State Densit

^○Q. H. Luc¹, H. B. Do¹, S. P. Cheng¹, J. H. Chen¹, S. H. Huynh¹, P. C. Chang¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-3] \"Improving Performance of In_0.53Ga_0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N₂/H₂ Gases

^○Q. H. Luc¹, S. P. Cheng¹, J. H. Chen¹, G. Y. Lin¹, H. B. Do¹, P. C. Chang¹, G. W. Huang¹, K. M. Chen¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-4] Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx Interfacial Layer using Plasma Enhanced Atomic Layer Deposition

^○S. K. Eom¹, R. S. Ki¹, D. H. Kim¹, H. Y. Cha², K. S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (331 - 340)

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