[N-5-4] High Mobility N-MOSFETs on GeSn Film Formed by Solid Phase Epitaxy with Surface Passivation by Oxygen Plasma Treatment

Y. H. Wu¹, ^○C. C. Su¹, Y. C. Fang¹, C. H. Hsieh¹ (1.National Tsing Hua Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 6:35 PM - 6:55 PM |PDF Download

[N-6-1] (Invited) High Performance Electronics Based on Novel Two Dimensional Materials

^○Y. Wu (1.Huazhong Univ. of Sci. and Tech.(China))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:00 AM - 9:30 AM |PDF Download

[N-6-2] Two Dimensional Si-Based Semiconductor Si_1-YC_Y: C Atom Induced Band Structure Modulation at Visible Region

^○T. Mizuno¹, Y. Nagamine¹, U. Omata¹, Y. Suzuki¹, W. Urayama¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ., 2.Tokyo Univ. Agric. & Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:30 AM - 9:50 AM |PDF Download

[N-6-3] Chemical Trend of Isoelectronic Traps in Si Tunnel FET; First-Principles Study

^○S. Iizuka¹, T. Nakayama¹ (1.Chiba Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:50 AM - 10:10 AM |PDF Download

[O-1-1] (Invited) Conductive Bridge RAM (CBRAM): functionality, reliability and applications

^○G. Molas, J. Guy, M. Barci, F. Longnos, G. Palma, E. Vianello, P. Blaise, B. De Salvo, L. Perniola (1.CEA-LETI(France))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:00 PM - 2:30 PM |PDF Download

[O-1-2] Visible-Light Effects on Nanoscale Conducting Filament in SiO₂/Cu CBRAM

^○T. Kawashima^1,2, K. S. Yew¹, Y. Zhou¹, M. K. Bera¹, H. Z. Zhang¹, D. S. Ang¹ (1.Nanyang Tech. Univ., 2.Toshiba Corp.(Singapore))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:30 PM - 2:50 PM |PDF Download

[O-1-3] A 32-kb Embedded SRAM Using 60-nm Crystalline Oxide Semiconductor Transistors and Power Gating with 45-ns 144-fJ/bit Data Backup

^○W. Uesugi¹, T. Ishizu¹, K. Kato¹, T. Onuki¹, H. Tamura¹, A. Isobe¹, N. Tsutsui¹, Y. Suzuki¹, Y. Okazaki¹, M. Fujita², J. Koyama¹, Y. Yamamoto¹, YamazakiS. ¹ (1.Semiconductor Energy Laboratory Co., Ltd., 2.VLSI Design and Edu. Center, Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:50 PM - 3:10 PM |PDF Download

[O-1-4] Analysis and Experimental Proof of Deterioration-free Memory Device Using CAAC-IGZO FET

M. Tsubuku¹, ^○T. Takeuchi¹, K. Ohshima¹, T. Murakawa¹, M. Fujita¹, D. Shimada¹, S. Sambonsuge¹, T. Atsumi¹, M. Sakakura¹, K. Kato¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Corp. Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 3:10 PM - 3:30 PM |PDF Download

[O-2-1] (Invited) Scaling and Optimization of Ferroelectric Hafnium Oxide for Memory Applications and Beyond

^○J. Müller, P. Polakowski, S. Riedel (1.Fraunhofer IPMS-CNT(Germany))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:05 PM - 4:35 PM |PDF Download

[O-2-2] Effect of Stress on Ferroelectricity of (Hf_0.5Zr_0.5)O₂ Thin Films

^○H. Funakubo^1,, T. Shiraishi¹, T. Shimizu¹, T. Yokouchi¹, T. Oikawa¹, H. Uchida² (1.Tokyo Tech, 2.Sophia Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 4:35 PM - 4:55 PM |PDF Download