[S-IIIB-2] Low Temperature Microwave Plasma Etching

S. Tachi, K. Tsujimoto, S. Arai, H. Kawakami, S. Okudaira (1.Central Research Laboratory, Hitachi, Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-3] A New Photobleachable Positive Resist for KrF Excimer Laser Lithography

Masayuki ENDO, Yoshiyuki TANI, Masaru SASAGO, Kazufumi OGAWA, Noboru NOMURA (1.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-4] Creation of Micro-Resinoid Siloxane and Its Optimization for High Tg E-Beam Resist

Shigeyuki Sugito, Shinji Ishida, Yasuo Iida Katsutoshi Mine, Naohiro Muramoto (1.Microelectronics Research Laboratories, NEC Corporation, 2.Dept. of Technical Service & Development, Toray Silicone Co., Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-5] Metallization for ULSI

Hideo Kotani (1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-6] Diffusion Barrier with Reactively Sputtered TiN Film for Thermally Stable Contact in Advanced VLSI

Katsunori MITSUHASHI, Osamu YAMAZAKI, Atsuhisa INOUE, Tatsuo MORITA, Koui OHTAKE, Masayoshi KOBA (1.Central Research Laboratories, Sharp Corporation, 2.Material Research and Analysis Center, Sharp Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-7] Aluminum Deposition from Weekly-Excited Metalorganic Source by Hybrid-Excitation CVD

Kazuya MASU, Jun SAKURAI, Nobuyuki SHIGEEDA, Kazuo TSUBOUCHI Nobuo MIKOSHIBA, Yosihisa TAKEUTI (1.Research Institute of Electrical Communication, Tohoku University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-8] A New CMOS Structure Using a Transistor on a Lateral Epitaxial Silicon Layer

T. Ishijima, K. Terada, T. Kubota, M. Sakao, T. Hamaguchi, A. Ishitani (1.R&D Group, NEC Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-9] A Novel Storage Capacitance Enlargement Structure Using a Double-Stacked Storage Node in STC DRAM Cell

T. Kisu, S. Kimura, T. Kure, J. Yugami, A. Hiraiwa, Y. Kawamoto, M. Aoki, H. Sunami (1.Hitachi VLSI Engineering Corp., 2.Central Research Laboratory, Hitachi, Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-10] Charge Losses of n-Doped Trench Cells

Lothar RISCH, Rotraud MALY, Wolfgang BERGNER, Roland KIRCHER (1.Siemens AG, Central Research and Development)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-11] Device Degradation Due to Band-to-Band Tunneling

Hideyuki Matsuoka, Yasuo Igura, Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download