[E-2-4] The Study of Metal-GaN Interface of Schottky Contacts with Different Metals

Shoou Jinn Chang、Fuh Shyang Juang、Yan Kuin Su、Y. C. Chiou (1.Department of Electrical Engineering, National Cheng Kung University、2.Department of Electro-Optics Engineering, National Huwei Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-5] The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals

Yan Kuin Su、Fuh Shyang Juang、Shoou Jinn Chang、Y. C. Chiou、J. K. Shiu (1.Department of Electrical Engineering, National Cheng Kung University、2.Department of Electro-Optics Engineering, National Huwei Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-6] AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy

Toshihide Ide、Mitsuaki Shimizu、Akira Suzuki、Xu-Qiang Shen、Hajime Okumura、Toshio Nemoto (1.Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji University、2.Optoelectric Division, Electrotechnical Laboratory、3.Course of Electronics, Graduate School of Engineering, Tokai University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LE-1-1] Very-Large-Gain Collector-Up GaN/W/WO3 Metal Base Transistors

K. Mochizuki、K. Uesugi、P. M. Asbeck、J. Gotoh、T. Mishima、K. Hirata、H. Oda (1.Central Research Laboratory, Hitachi, Ltd.、2.Research Institute for Electronic Science, Hokkaido University、3.ECE Dept., University of California、4.Image-Related Device Development Center, Hitachi, Ltd.、5.Hitachi ULSI Systems Corp.)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[LE-1-2] Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD

Takashi Egawa、Hiroyasu Ishikawa、Gangyuan Zhao、Masayoshi Umeno (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors

Noburu Fukushima、Kazuhide Abe、Shoko Niwa、Tomonori Aoyama、Masahiro Kiyotoshi、Souichi Yamazaki、Mitsuaki Izuha、Kazuhiro Eguchi、Katsuhiko Hieda、Tunetoshi Arikado (1.Corporate Research and Development Center, Toshiba Corporation、2.Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Inductive-Coupled RF Magnetron Plasma Deposition of (Ba, Sr)TiO3 for Decoupling Capacitors

N. Fujiwara、T. Kikkawa、S. Miyazaki、F. Nishiyama、M. Hirose (1.Research Center for Nanodevices and Systems, Department of Electrical Engineering, and Radiation Research Facility, Hiroshima University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Gas Phase Reactions in the MOCVD of (Ba, Sr)TiO3 Films: A Study by Microdischarge Optical Emission Spectroscopy

Shun Momose、Toshihiro Nakamura、Kunihide Tachibana (1.Department of Electronic Science and Engineering, Kyoto University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta2O5 and Al2O3 MIS Capacitor for 0.13 μm Technology and Beyond

Hyun Seok Lim、Sang Bom Kang、In Sang Jeon、Gil Heyun Choi、Young Wook Park、Sang In Lee、Joo Tae Moon (1.Process Development 2, Semiconductor R&D Center, Samsung Electronics)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-5] Suppression of Storage Node Contact Distortion for Gigabit-Scale DRAM with COB Structure

D. H. Kim、H. Jeoung、H. S. Kim、J. H. Park、K. H. Yeom、S. Y. Kim、J. M. Park、T. K. Kim、J. S. Kim、D. K. Park、Y. J. PARK、J. W. PARK (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード