[P-1-17] Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers

Koji Eriguchi、Akira Ohno、Daisuke Hamada、Masayuki Kamei、Hiroshi Fukumoto、Kouichi Ono (1.Graduate School of Engineering, Kyoto University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-18] Pulsed Focused-Laser Beam Annealing of Ultra-Shallow Implanted Silicon and In Situ Dopant Activation Monitoring

Woo Sik Yoo、Kitaek Kang (1.WaferMasters, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-19] UV-VIS Raman Characterization of High Dose Ultra Shallow Implanted Silicon before and after Excessive Annealing

T. Sasaki、H. Minami、K. Kisoda、W. S. Yoo、M. Yoshimoto、H. Harima (1.Kyoto Institute of Technology、2.Wakayama University、3.WaferMasters, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-20] Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers

Naoki Sano、Toshiyuki Sameshima、Yasuhiro Matsuda、Yasunori Andoh (1.Hightec Systems Corporation、2.Tokyo University of Agriculture and Technology、3.Nissin Ion Equipment Co., Ltd)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-21] Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures

Akito Hara (1.Electronic Engineering, Tohoku-Gakuin University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-22] Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation

Hoong-Shing Wong、Lap Chan、Ganesh Samudra、Yee-Chia Yeo (1.Silicon Nano Device Lab., Department of Electrical and Computer Engineering, National University of Singapore)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-23] In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET

Tetsuya Ikuta、Yuki Miyanami、Shigeru Fujita、Hayato Iwamoto、Shingo Kadomura、Takayoshi Shimura、Heiji Watanabe、Kiyoshi Yasutake (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation、2.Graduate School of Engineering, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-24] Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

Y. Naitou、A. Ando、H. Ogiso、S. Kamohara、F. Yano、A. Nishida (1.National Institute of Advanced Industrial Science and Technology (AIST)、2.MIRAI-Selete)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-25L] Oxygen-Vacancy-Induced Vt shift in La-containing Devices

B.J. O’Sullivan、R. Mitsuhashi、G. Pourtois、V.S. Chang、C. Adelmann、T. Schram、L.-A. Ragnarsson、N. Van der Heyden、H.-J. Cho、Y. Harada、A. Veloso、R. O’Connor、L. Pantisano、H.Y. Yu、G. Groeseneken、P. Absil、S. Biesemans、A. Ikeda、M. Niwa (1.IMEC、2.Matsushita Ltd、3.TSMC、4.Samsung、5.Matsushita Electric Industrial Co. Ltd.、6.IMEC)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-26L] Physical Understanding of Determinant Factors for Φeff on La-based High-k

Masamichi Suzuki、Tatsuo Schimizu、Masato Koyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード