[N-9-4] Spin Current Generation and Utilization in Metals and Insulators

E. Saitoh^1,2,3 (1.Tohoku Univ., 2.CREST-JST, 3.ASRC-JAEA , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-1] High Quality Germanium Dioxide Formation using Damage-Free and Low-Temperature Neutral Beam Oxidation Process

A. Wada¹, K. Endo², M. Masahara², S. Samukawa¹ (1.Tohoku Univ., 2.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-2] Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements

D. H. Lee¹, K. Kubo¹, T. Kanashima¹, M. Okuyama¹ (1.Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-3] First-Principles Study on Interface Properties of GeO₂/Ge System

S. Saito¹, T. Ono¹ (1.Grad. Schl. of Eng., Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-4] Evaluation of Thermally-Grown Ge Oxide on Ge(100) and Ge(111) Surfaces

S. K. Sahari¹, A. Ohta¹, M. Matsui¹, H. Murakami¹, S. Higashi¹, S. Miyazaki² (1.Hiroshima Univ., 2.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-5] Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H₂-Annealing

M. Adachi¹, Y. Shimura¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-6] Formation of Ohmic Contacts with Shallow NiGe/n⁺ Ge Junction

M. Miura^1,2, M. Noguchi^1,2, J. Fujikata^1,2, T. Horikawa^1,3, M. Takahashi^1,3, Y. Noguchi^1,3, Y. Arakawa^1,4 (1.PECST, 2.PETRA, 3.AIST, 4.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-7] Estimation of breakdown electric-field strength reflecting local structures of SiO₂ by using first-principles molecular orbital calculation technique

H. Seki¹, Y. Shibuya², D. Kobayashi³, H. Nohira², K. Yasuoka¹, K. Hirose³ (1.Keio Univ., 2.Tokyo City Univ., 3.ISAS/JAXA , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-8] Clear Difference between Chemical Structure of SiO₂/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules

T. Suwa¹, Y. Kumagai¹, A. Teramoto¹, T. Muro², T. Kinoshita², S. Sugawa¹, T. Hattori¹, T. Ohmi¹ (1.Tohoku Univ., 2.JASRI , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-1-9] Thermal Stability of Single and Alloy Noble Metals as for PMOS Gate Electrode

C. H. Choi¹, J. Ahn¹, R. Choi² (1.Hanyang Univ., 2.Inha Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download