[H-1-5] Band nesting in semiconducting transition metal dichalcognide

G. Eda^1,2 (1.Dept. of Physics/Chemistry, NUS、2.Graphene Research Centre, NUS (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-1] Growth, characterization, and functionalization of graphene and hexagonal boron nitride

H. Hibino¹、S. Wang¹、C.M. Orofeo¹、S. Suzuki¹ (1.NTT Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-2] Chemical Vapor Deposition of Hexagonal Boron Nitride Films on c-plane Sapphire Substrates

N. Umehara¹、I. Kuwahara¹、T. Kouno¹、H. Kominami¹、Y. Nakanishi¹、K. Hara¹ (1.Shizuoka Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-3] Quantum Interference in a Ballistic Graphene n-p-n Junction: Fabry-Perot Interference and a Novel Magnetoresistance Oscillation

S. Morikawa¹、S. Masubuchi¹、R. Moriya¹、K. Watanabe²、T. Taniguchi²、T. Machida¹ (1.Univ. of Tokyo、2.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-4] Fabrication of Two-Dimensional 10 nm Graphene Dot Array and Optical Characterization

T. Okada¹、K. Igarashi¹、P. Han²、T. Hitosugi²、C.H. Huang³、C.Y. Su⁴、S. Samukawa^1,2 (1.IFS, Tohoku Univ.、2.WPI-AIMR, Tohoku Univ.、3.Ming Chi Univ. of Tech.、4.National Central Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-5] Influence of Rhenium on the Structural and Optical Properties of Molybdenum Disulfide

M. Sigiro¹、Y.S. Huang¹、C.H. Ho²、Y.C. Lin³、K. Suenaga³、K.K. Tiong⁴ (1.Department of Electronic and Computer Eng. National Taiwan Univ. of Sci. and Tech.、2.Graduate Inst. of Applied Sci. and Tech. National Taiwan Univ. of Sci. and Tech.、3.AIST、4.National Taiwan Ocean Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-6] Electrical and Optical Properties of Ni-doped and Undoped MoS₂

C.C. Huang¹、D.Y. Lin¹、T.S. Ko¹、N.W. Chang¹、Y.S. Huang² (1.National Changhua Univ. of Edu.、2.National Taiwan Univ. of Sci. and Tech. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-1] Quantum anomalous Hall effect in magnetically doped topological insulator

K. He¹、Y. Wang¹、Q.-K. Xue¹ (1.Tsinghua Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-2] Band-Alignment Induced Current Modulation in Bi₂Se₃ Topological Insulator

G. Gupta¹、M.B.A. Jalil¹、G. Liang¹ (1.NUS (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-3L] Electric transport properties of the thallium-based topological insulators

G. Eguchi¹、K. Kuroda²、K. Shirai²、A. Kimura²、M. Shiraishi¹ (1.Dept. of Electronic Science and Engineering, Graduate School of Engineering, Kyoto Univ.、2.Graduate School of Science, Hiroshima Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード