[E-3-4] Normally-off Operation GaN HEMT Devices with Nano-pattern Structure

Y.K. Fu¹, W.H. Kuo¹, S.F. Lin¹, Y.L. Chou¹ (1.Indus. Tech. Res. Inst. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-3-5] Enhancement-mode AlGaN/GaN HEMTs by selective area growth of AlGaN layer with Al₂O₃ deposition

T. Narita¹, K. Inoue¹, A. Wakejima¹, T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-3-6] Study of Constant Voltage Off-state Stress on Au-free AlGaN/GaN Schottky Barrier Diodes

J. Hu^1,2, S. Stoffels¹, S. Lenci¹, T. Wu^1,2, N. Ronchi¹, S. You¹, B. Bakeroot^1,3, G. Groeseneken^1,2, S. Decoutere¹ (1.imec, 2.KU Leuven, 3.Ghent Univ. (Belgium))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1] The Continuing Evolution of Silicon Carbide Power MOSFETs

J.A. Cooper¹ (1.Purdue Univ. (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] 3.3-kV Double Channel-Doped SiC Vertical JFET in Cascode Configuration

H. Shimizu¹, S. Akiyama¹, N. Yokoyama¹, A. Shima¹, Y. Shimamoto¹ (1.Hitachi Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] Temperature Dependence of Current Gain in 4H-SiC Bipolar Junction Transistors

S. Asada¹, T. Okuda¹, T. Kimoto¹, J. Suda¹ (1.Kyoto Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4L] 3.3 kV/1500 A Power Modules for the World’s First All-SiC Traction Inverter

K. Hamada¹, S. Hino^1,2, N. Miura¹, H. Watanabe^1,2, S. Nakata^1,2, E. Suekawa³, Y. Ebiike³, M. Imaizumi³, I. Umezaki³, S. Yamakawa^1,2 (1.Advanced Technology R&D Center, Mitsubishi Electric Corp., 2.R&D Partnership for Future Power Electronics Technology (FUPET), 3.Power Device Works, Mitsubishi Electric Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-7-1] High-speed and Low-leakage Characteristics of 60-nm C-axis Aligned Crystalline Oxide Semiconductor FET with GHz-ordered Cutoff Frequency

Y. Yakubo¹, S. Nagatsuka¹, S. Matsuda¹, S. Hondo¹, Y. Hata¹, Y. Okazaki¹, Y. Yamamoto¹, M. Nagai¹, S. Sasagawa¹, T. Atsumi¹, M. Sakakura¹, T. Nakura², Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd., 2.Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] A Novel Method for Fabrication of Sub-100nm IGZO TFTs

B.S. Shie¹, H.C. Lin^1,2, T.Y. Haung¹ (1.NCTU, 2.National Nano Device Labs. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-7-3] All Solution Processed High Performance In-Ga-Zn-O Thin Film Transistor Fabricated at Low Temperature using Microwave irradiation

K.W. Jo¹, W.J. Cho¹ (1.Kwangwoon Univ., Department of Electronic Materials Engineering (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (121 - 130)

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