[PS-14-4] Analysis of forward voltage and reverse recovery charge control of silicon PiN diodes

Y. Yamashita¹, S. Machida¹ (1.Toyota Central R&D Labs., Inc. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-5] Growth and investigation of stacking fault of 4H-SiC C-face homoepitaxial layers with 1° off-angle

K. Masumoto^1,2, H. Asamizu^1,3, K. Tamura^1,3, C. Kudou^1,4, J. Nishio^1,5, K. Kazutoshi^1,2, T. Ohno^1,6, H. Okumura^1,2 (1.FUPET, 2.AIST, 3.ROHM Co., Ltd., 4.Panasonic Corp., 5.Toshiba Corp., 6.Hitachi, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-6] Tilt-implanted trench termination for SiC power devices

G.Y. Song¹, D.H. Cho¹, G.H. Song¹, G.S. Kim¹ (1.Sogang Univ. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-7] Short-circuit capability of SiC power MOSFETs

T. Shoji^1,3, A. Soeno², H. Toguchi², S. Aoi¹, Y. Watanabe¹, H. Tadano³ (1.Toyota Central R&D Labs., Inc., 2.Toyota Mortor Corp., 3.Univ. of Tsukuba (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-8] Switching characteristics of a 4H-SiC IGBT with interface defects up to the nonquasi-static regime

I. Pesic^1,2, D. Navarro², M. Fujinaga², Y. Furui², M. Miura-Mattausch¹ (1.Hiroshima Univ., 2.Silvaco Japan (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-9] Energy-band offset of AlN/Diamond(111) heterojunction determined by X-ray photoelectron spectroscopy

M. Imura¹, A. Tanaka¹, H. Iwai¹, J. Liu¹, M. Liao¹, Y. Koide¹ (1.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-10] Schottky-barrier inhomogeneities in WC/p-diamond at high temperature

A. Fiori¹, T. Teraji¹, Y. Koide¹ (1.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-11] Static and transient performance comparisons between diamond p+/p- diode and m-i-p+ (Metal-Intrinsic-p+) diode

A. Nawawi¹, K.J. Tseng¹, R. Rusli¹, G.A.J. Amaratunga^1,2, H. Umezawa³, S. Shikata³ (1.Nanyang Tech. Univ., 2.Univ. of Cambridge, 3.AIST (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-12L] Generation and suppression of oxidation byproducts at 4H-SiC C-face / SiO₂ interface characterized by infrared spectroscopy

H. Hirai¹, K. Kita^1,2 (1.The Univ. of Tokyo, 2.JST-PRESTO (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-13L] Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

J. Hasegawa¹, M. Noguchi², M. Furuhashi², S. Nakata², T. Iwasaki¹, T. Kodera¹, T. Nishimura¹, M. Hatano¹ (1.Tokyo Inst. Of Tech., 2.Mitsubishi Electric Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (521 - 530)

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