[P-8-2] Enhancement of Carrier Injection in OLEDs Utilizing Field Concentration to Carbon Nanotubes

T. Yamada¹, S. Kishimoto¹, Y. Ohno¹ (1.Nagoya Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[P-8-3] Graphene Synthesis by Laser-Annealing Technique Using Co Catalyst

Y. Ishibashi¹, K. Koshida¹, Y. Kanai¹, Y. Ohno¹, K. Maehashi¹, K. Inoue¹, K. Matsumoto¹ (1.Osaka Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[P-8-4L] Subthreshold transport in mono- and multi-layered MoS₂ FETs

F. Nan¹, K. Nagashio¹, A. Toriumi¹ (1.The Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[P-9-1] Multi-Layered MoS₂ Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs

T. Ohashi¹, K. Suda², S. Ishihara², N. Sawamoto², S. Yamaguchi¹, K. Matsuura¹, K. Kakushima¹, N. Sugii¹, A. Nishiyama¹, Y. Kataoka¹, K. Natori¹, K. Tsutsui¹, H. Iwai¹, A. Ogura², H. Wakabayashi¹ (1.Tokyo Tech, 2.Meiji Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[P-9-2] Direct Deposition of High-k Y₂O₃ on h-BN by Atomic Layer Deposition

N. Takahashi¹, K. Watanabe², T. Taniguchi², K. Nagashio¹ (1.Univ. of Tokyo, 2.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[P-9-3] Epitaxial Graphene Devices for Scanning Probe Measurements

A. Iagallo¹, S. Tanabe², S. Roddaro¹, M. Takamura², Y. Sekine², H. Hibino², V. Miseikis³, C. Coletti³, V. Piazza³, F. Beltram¹, S. Heun¹ (1.NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, 2.NTT Basic Res. Lab., NTT Corp., 3.Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia (Italy))

2014 International Conference on Solid State Devices and Materials |PDF Download

[P-9-4] Low Pull-in Voltage Graphene Contact Switch Fabricated without Acid-Etching

J. Sun¹, W.Z. Wang¹, M. Muruganathan¹, H. Mizuta^1,2 (1.AIST, 2.Univ. of Southampton (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PL-1] Strategy for Science and Technology Innovations - Expectations for Solid State Devices and Materials

K. Kyuma¹ (1.Council for Science and Technology Policy, Cabinet Office (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PL-2] New Channel Materials and Devices Beyond Si CMOS

P.D. Ye¹ (1.Purdue University (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-1] High Mobility Ultrathin GeSn (111) pMOSFETs by Solid Phase Epitaxy

T. Maeda¹, W. Jevasuwan¹, H. Hattori¹, N. Uchida¹, S. Miura², M. Tanaka², J.P. Locquet³, R. Lieten^3,4,5 (1.AIST, 2.Yokohama National Univ., 3.KU Leuven, 4.IMEC, 5.Entegris (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

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