[N-1-3] Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC

S. Harada¹, S.Y. Xiao¹, M. Tagawa¹, Y. Yamamoto¹, S. Arai¹, N. Tanaka¹, T. Ujihara¹ (1.Nagoya Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-1-4] Heteroepitaxial growth of diamond films on 3C-SiC(001)/Si substrates by antenna-edge microwave plasma CVD

J. Yaita^1,2, T. Iwasaki^1,2,3, M. Natal⁴, S.E. Saddow⁴, M. Hatano^1,2,3 (1.Tokyo Tech, 2.JST-CREST, 3.JST-ALCA, 4.Univ. of South Florida (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-1-5L] α-Ga₂O₃ Schottky barrier diodes fabricated by mist epitaxy technique

M. Oda^1,2, A. Takatsuka¹, T. Hitora¹, J. Kikawa³, K. Kaneko², S. Fujita² (1.FLOSFIA, INC., 2.Kyoto Univ., 3.Ritsumeikan Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-2-1] Challenges to the silicon IGBT limit with PNM structure

M. Sumitomo¹, H. Sakane¹, K. Arakawa¹, Y. Higuchi¹, M. Matsui¹ (1.DENSO Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-2-2] Current filamentation caused by dynamic avalanche during turn-off transient under short-circuit operation of IGBTs

T. Kobayashi¹, T. Suwa¹, T. Matsudai², T. Ogura² (1.Toshiba I.S. Corp., 2.Toshiba Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-2-3] Design for EMI suppression during reverse recovery by 600V lateral SOI PiN diode with traps

M. Tsukuda¹, H. Imaki², I. Omura² (1.The International Centre for the Study of East Asian Development, 2.Kyusyu Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-2-4] An 800V-class lateral NMOS structure with a reduced parasitic capacitance for a level-shift circuit integrated in a high voltage gate driver IC

M. Yamaji¹, A. Jonishi¹, H. Sumida¹, Y. Hashimoto² (1.Fuji Electric Corp. Ltd., 2.Shinshu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-2-5] 250°C Switching Behavior of All SiC Power Module with Sandwich Structure

F. Kato^1,2, R. Simanjorang², F. Lang², H. Nakagawa^1,2, H. Yamaguchi^1,2, H. Sato^1,2 (1.AIST, 2.R&D Partnership for Future Power Electronics Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-2-6] High speed real-time temperature monitoring system inside power devices package using infrared radiation

N. Hirata¹, A. Watanabe¹, I. Omura¹ (1.Kyushu Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-8-1] Accurate physical compact models of high-voltage/power semiconductor devices for efficient design of performance-optimized circuits and systems

H.J. Mattausch¹, T. Umeda¹, H. Kikuchihara¹, M. Miura-Mattausch¹ (1.Hiroshima Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (301 - 310)

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