[PS-1-2] Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature

N. Taoka^1,2, T. Asano², T. Yamaha², T. Terashima², S. Asaba², O. Nakatsuka², P. Zaumseil¹, G. Capellini¹, T. Schroeder¹, S. Zaima² (1.IHP, 2.Nagoya Univ. (Germany))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-3] Effect of Kr/O₂ Mixed ECR Plasma Oxidation on Electrical Properties of Al₂O₃/Ge Gate Stacks Fabricated by ALD

Y. Nagatomi¹, Y. Nagaoka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-4] High-k ⁄ Ge Interface Passivation Using Cycling Ozone Oxidation

X. Yang^1,2, S.K. Wang¹, L. Han^1,2, X. Zhang², B. Sun¹, H.D. Chang¹, W. Zhao¹, Z.H. Zeng^1,2, H.G. Liu¹, Y.P. Cui² (1.Inst. of Microelectronics of Chinese Academy of Science, 2.Univ. of Southeast (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-5] Flexible Silicon-Germanium Devices With High-k/Metal Gate Stacks For Next Generation High Hole Mobility Channel Devices

J.M. Nassar¹, A.M. Hussain¹, J.P. Rojas¹, M.M. Hussain¹ (1.King Abdullah Univ. of Science and Technology (KAUST) (Saudi Arabia))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-6] Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Y. Liao¹, X. Ji¹, Q. Guo², F. Yan¹ (1.Nanjing Univ., 2.Wuhan Xinxin Semiconductor Manufac.Company (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-7] Thickness Dependences of Stress, Poisson’s Ratio and Longitudinal Optical Phonon Lifetime in Ultrathin Strained-Silicon-on-Insulator

V. Poborchii¹, M. Hara¹, T. Tada¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-8] Assessment of Self Heating Effect (SHE) on Negative Bias Temperature Instability in SOI FinFETs under Circuit Operation

H. Jiang¹, Z.Y. Lun¹, B. Chen¹, G. Du¹, X.Y. Liu¹, X. Zhang¹ (1.Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-9] The Impact of Positive Bias Temperature Instabilities on Stacked High-k/Metal Gate Transistor with TiN Barrier Layer

D.C. Huang¹, J. Gong², C.F. Huang¹, S.S. Chung³ (1.National Tsing Hua Univ., 2.Tunghai Univ., 3.NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-10] Recovery of Interface States Generated by Hot-Carrier Stress

Y. Yonamoto¹ (1.Hitachi, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-11] Reliability of Polycrystalline HfO₂ Thin Films Directly Bonded to Si Substrates

R. Hasunuma¹, Y. Tomura¹, K. Yamabe¹ (1.Univ. of Tsukuba (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

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