The Japan Society of Applied Physics

540 results (131 - 140)

[E-8-1] High Performance III-V MOS Technologies

M.J.W. Rodwell1, S. Lee1, C.-Y. Huang1, D. Elias1, V. Chobpattana2, B.J. Thibeault1, W. Mitchell1, S. Stemmer2, A.C. Gossard2 (1.ECE Dept. Univ. of California, Santa Barbara, 2.Materials Dept. Univ. of California, Santa Barbara (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-1-4] Large Size InGaAs-o-I Substrates Fabricated by Direct Wafer Bonding on Si

E. Uccelli1, N. Daix1, L. Czornomaz1, D. Caimi1, C. Rossel1, M. Sousa1, H. Siegwart1, C. Marchiori1, J.M. Hartmann2, K.T. Shiu3, C.W. Weng3, M. Krishnan3, M. Lofaro3, M. Kobayashi3, D. Sadana3, J. Fompeyrine1 (1.IBM Zurich Research Laboratory, 2.CEA, LETI, 3.IBM T. J. Watson Research Center (Switzerland))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (131 - 140)