[PS-5-8] A High-frequency Level-up Shifter Based on 0.18μm Vertical MOSFETs with More than 70% Reduction of Overshoot-voltage Above VDD

S. Tanoi^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.ACCEL, JST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-9] Dynamically Reconfigurable Non-Volatile Multi-Context FPGA with CAAC-OS-based Programmable Routing Switches

N. Bjorklund^1,2, Y. Okamoto¹, T. Aoki¹, M. Kozuma¹, Y. Kurokawa¹, T. Ikeda¹, N. Yamade¹, Y. Okazaki¹, H. Miyairi¹, M. Fujita³, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co., Ltd., 2.Linkoping Univ., 3.Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-10] A Dual-Mode Active Pixel Sensor for Low-Light-Level Detection Using a Hybrid Photodetector

S. Lee¹, S.H. Jo¹, M. Bae¹, B.S. Choi¹, J.K. Shin¹ (1.Kyungpook National Univ. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-11] Multichannel Capacitance to Voltage Converter for Pressure Sensor Front-end

R. Kuguminato¹, T. Matsuda¹, K. Izumi¹, H. Iwata¹, M. Mizushima², T. Obata³ (1.Toyama Pref. Univ., 2.Oga Inc., 3.Toyama Industrial Technology Center (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-12] Pulse-Output Readout Circuit with Temperature Compensation for a Temperature-Dependent Input Voltage

R.L. Wang¹, C. Yu¹, W.D. Wu¹, Y.F. Hao¹, J.L. Shi¹, H.H. Liao², H.H. Tsai², Y.Z. Juang² (1.National Kaohsiung Normal Univ., 2.National Chip Implementation Center, National Applied Research Lab. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-13L] Studies on Response Speed and Sensitivity of Two-Dimensional Integrated Magnetic Sensor

T. Kimura¹, K. Uno¹, T. Masuzawa¹ (1.Ibaraki Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-1] Comparison of Power Gain Performance between Conventional and Independently Biased HBT Cascode Chips

D.M. Luong¹, K. Honjo¹, Y. Takayama¹, R. Ishikawa¹ (1.Univ. of Electro-Communications (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-2] Fluorinated Al₂O₃ Gate Dielectric Engineering on GaSb MOS Devices

Z.H. Zeng^1,2, B. Sun¹, H.D. Chang¹, W. Zhao¹, X. Yang^1,2, S.K. Wang¹, X. Zhang², Y.P. Cui², H.G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences, 2.Southeast Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-3] InGaSb Buried-Channel pMOSFET Fabricated by Using Digital Etch Technique

B. Sun¹, Z.H. Zeng^1,3, H.D. Chang¹, S.K. Wang¹, W.X. Wang², H.G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences, 2.Inst. of Physics, Chinese Academy of Sciences, 3.Southeast Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-4] Characterization of GaAs Surface State by Hard X-ray Photoemission Spectroscopy

Y. Saito¹, J. Iihara¹, T. Yonemura¹, K. Yamaguchi¹, D. Tsurumi¹ (1.Sumitomo Electric Industries, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

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