[N-8-2] Two-component model for threshold voltage shifts of SiC MOSFETs under negative bias stress

M. Matsumura¹, K. Kobayashi¹, Y. Mori¹, N. Tega¹, A. Shima¹, D. Hisamoto¹, Y. Shimamoto¹ (1.Hitachi, Ltd., (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[N-8-3] High-temperature and High-voltage characteristics of Cu/diamond Schottky diodes

K. Ueda¹, K. Kawamoto¹, S. Aichi¹, M. Nishiwaki¹, H. Asano¹ (1.Nagoya Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

M. Kato¹, Y. Mori¹, M. Ichimura¹ (1.Nagoya Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

H. Xu^1,2 (1.Lund Univ., 2.Peking Univ. (Sweden))

2014 International Conference on Solid State Devices and Materials |PDF Download

S. Sasaki¹, K. Tateno¹, G. Zhang¹, H. Pigot¹, Y. Harada¹, S. Saito¹, A. Fujiwara¹, T. Sogawa¹, K. Muraki¹ (1.NTT Basic Research Labs. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

K. Tomioka^1,2, F. Ishizaka¹, E. Nakai¹, T. Fukui¹ (1.Hokkaido Univ., 2.JST-PRESTO (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

J.H. Hong¹, S.H. Lee¹, Y.R. Kim¹, E.Y. Jeong¹, J.S. Yoon¹, J.S. Lee¹, R.H. Baek², Y.H. Jeong¹ (1.Pohang Univ. of Tech. and Sci., 2.SEMATECH (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

Y.B. Zhang¹, L. Sun¹, H. Xu¹, Y.Q. Xia¹, J.W. Han¹, Y. Wang¹, S.D. Zhang¹ (1.Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

T. Zushi^1,3, K. Ohmori², K. Yamada², T. Watanabe¹ (1.Waseda Univ., 2.Univ. of Tsukuba, 3.JSPS Research Fellow (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

H.M. Yamamoto^1,2 (1.CIMoS, IMS, 2.RIKEN (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (311 - 320)