[F-1-5] A New Method to Effectively Separate PBTI-induced Shallow and Deep Energy Traps in a 28nm High-k Metal-Gate MOSFET

E. Hsieh¹, P. Wu¹, S. Chung¹, J. Ke², C. Yang², C. Tsai² (1.NCTU, 2.UMC (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-2-1] Band Offsets at High-k Oxide/Semiconductor Interfaces: From Silicon to High-Mobility Channel Materials

V.V. Afanas'ev¹, H.-Y. Chou¹, M. Houssa¹, A. Stesmans¹ (1.Univ. of Leuven (Belgium))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-2-2] Quantitative Evaluation of Slow Traps near Ge MOS Interfaces by Using Time Response of MOS Capacitance

K. Tanaka^1,2, R. Zhang^1,2, M. Takenaka^1,2, S. Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-2-3] Validity of Direct-gap Photoluminescence Analysis for Non-destructive Characterization of Oxide/Germanium Interface

S. Kabuyanagi^1,2, T. Nishimura^1,2, T. Yajima^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-2-4] Spatial Variation of the Work Function in Nano-crystalline TiN Films Measured by Dual-Mode Scanning Tunneling Microscopy

L. Bolotov¹, K. Fukuda¹, T. Tada¹, T. Matsukawa¹, M. Masahara¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-2-5L] Sub-300^oC fabrication of poly-GeSn junctionless tri-gate p-FETs enabling sequential 3D integration of CMOS circuits

M. Kurosawa^1,2, Y. Kamata³, H. Ikenoue⁴, N. Taoka¹, O. Nakatsuka¹, T. Tezuka³, S. Zaima¹ (1.Nagoya Univ., 2.JSPS, 3.AIST/GNC, 4.Kyushu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-3-1] Negative Capacitance in Ferroelectric Materials and Implications for Steep Transistors

S. Salahuddin¹ (1.Univ of California, Berkeley (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-3-2] Development of Ferroelectric Phase in TiN/Hf-Zr-O/TiN Capacitors Prepared by Sputter Deposition and Capped Anneal

S. Migita¹, H. Ota¹, Y. Morita¹, M. Masahara¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-3-3] SiO₂-interface Layer Reduction in HfO₂ Gate Stacks through Si-substrate Oxidation

X. Li¹, T. Yajima¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-3-4] Defect Distribution and MIGS at Metal/Ge Interfaces; First-Principles Study

S. Sasaki¹, T. Hiramatsu¹, K. Kobinata¹, T. Nakayama¹ (1.Chiba Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (141 - 150)

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