[G-7-4] Fabrication And Optical Characterization Of α-Germanium Nano Disk Structure Using Bio-Template And Neutral Beam Etching for Solar Cell Application

M.T. Chentir^1,2, T. Fujii^1,3, T. Okada¹, T. Isoda⁴, K. Itoh^2,4, H. Endo³, Y. Hoshi⁵, N. Usami⁵, S. Samukawa^1,2,6 (1.Inst. of Fluid Sci., Tohoku Univ., 2.CREST Japan Sci. and Tech. Agency, 3.Honda R&D Co., Ltd., 4.Keio Univ., 5.Nagoya Univ., 6.WPI-Advanced Inst. for Materials Res., Tohoku Univ. (Japan))

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[G-7-5] Built-in Low Pressure Drop Liquid Cooling with Internal Graphene Fins on PV/T and CPV modules: Parametric Analysis and Experimental Study

P. Jarumongkonsak¹, Y.Y. Yan¹ (1.Univ. of Nottingham (UK))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-8-1] Development of Heterojunction Back Contact Si Solar Cells

J. Nakamura¹ (1.Sharp Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Surface Passivation of c-Si by Nanoengineered AlOx toward Low-Cost, High-Efficiency c-Si Solar Cells

H. Lee^1,4, N. Sawamoto¹, K. Ueda², Y. Enomoto², K. Arafune^2,4, H. Yoshida^2,4, S. Satoh^2,4, T. Nagata³, T. Chikyow³, A. Ogura^1,4 (1.Meiji Univ., 2.Univ. of Hyogo, 3.NIMS, 4.CREST, JST (Japan))

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[G-8-3] Epitaxial Growth of Germanium Thin Films on Crystal Silicon Substrates by Solid Phase Crystallization

M. Kanai¹, M. Isomura¹ (1.Tokai Univ. (Japan))

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[G-8-4] Degradation by Acetic Acid for Crystalline Si Photovoltaic Modules

N. Uchiyama¹, A. Masuda¹ (1.AIST (Japan))

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[H-1-1] Spin-valley physics in 2D crystals

Y. Iwasa^1,2 (1.Univ.Tokyo, 2.RIKEN (Japan))

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[H-1-2] In situ Tuning of Bandgap in Graphene Oxide Achieved by Solid State Ionics Device

T. Tsuchiya¹, K. Terabe¹, M. Aono¹ (1.NIMS (Japan))

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[H-1-3] Exfoliated-graphene/MoS₂/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

R. Moriya¹, T. Yamaguchi¹, Y. Inoue¹, Y. Sata¹, N. Yabuki¹, S. Morikawa¹, S. Masubuchi^1,2, T. Machida^1,2 (1.IIS, Univ. of Tokyo, 2.INQIE, Univ. of Tokyo (Japan))

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[H-1-4] Fabrication and Characterization of MoS₂ FET structure with Nano-Sheets Ca₂Nb₃O₁₀ Gate Insulator

T. Kobayashi¹, S. Hirose¹, H. Uchida², T. Kawae¹, A. Morimoto¹ (1.Kanazawa Univ., 2.Sophia Univ. (Japan))

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