[PS-8-13] Enhancement of Pyroelectric PZT Thick Film Sintered at Low Temperature on Pt-Si Substrate by Adding Pb₅Ge₃O₁₁

C.G. Wu¹, Q.X. Peng¹, J. Meng¹, X.Y. Sun¹, Y. Shuai¹, J.Q. Cao¹, W.B. Luo¹, W.L. Zhang¹ (1.Univ. of Electronic Sci. and Tech. of China (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-14] Effects of Pr Doping on the Scintillation Properties of CeBr₃ Crystals Grown by the Modified Micro-Pulling-Down Method

T. Ito¹, Y. Yokota², S. Kurosawa^1,2, K. Kamada^2,3, J. Pejchal^2,4, Y. Ohashi¹, A. Yoshikawa^1,2,3 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.C&A Corp., 4.Inst. of Phys. AS CR (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-15] LiF/CaF₂/LiBaF₃ Ternary Fluoride Eutectic Scintillator

K. Hishinuma¹, K. Kamada^2,3, S. Kurosawa^1,2, A. Yamaji¹, J. Pejchal^2,4, Y. Yokota², Y. Ohashi¹, A. Yoshikawa^1,2,3 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.C&A Corp., 4.Inst. of Phys. AS CR, Cukrovarnicka (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-16] Improvement of Scintillation Properties on Ce doped Y₃Al₅O₁₂ scintillator by divalent cations co-doping

K. Kamada^1,2, A. Nagura³, M. Nikl⁴, S. Kurosawa³, J. Pejchal^1,4, Y. Ohashi³, Y. Yokota¹, A. Yoshikawa^1,2,3 (1.NICHe, Tohoku Univ., 2.C&A Corp., 3.IMR, Tohoku Univ., 4.Inst. of Phys. AS CR (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-17] Electrical Transport Properties in Ternary NbMoS₂ Layer crystals

H.P. Hsu¹, R.S. Chen², Y.H. Huang², C.C. Pung², Y.S. Huang² (1.Ming Chi Univ. of Tech., 2.National Taiwan Univ. of Sci. and Tech. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-8-18] Behavior of Focused Ga⁺ Beam Spot Milling and its Superimposition Propetry

H.M. Chen¹, P.J. Wu², K.Y. Shen¹, C.H. Kuan^1,2 (1.Graduate Inst. of Electronics Engineering, National Taiwan Univ., 2.Graduate Inst. of Biomedical Electronics and Bioinformatics, National Taiwan Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-1] Analysis of Single- and Double-barrier Tunneling Diode Structures using Ultra-thin-CaF₂/CdF₂/Si Multilayered Heterostructures Grown on Si

K. Suda¹, Y. Kuwata¹, M. Watanabe¹ (1.Tokyo Tech (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-2] Diode like Behavior of IZO Junction with Superconducting Electrode at Low Temperatures

K. Makise¹, B. Shinozaki² (1.NICT, 2.Univ. of Kyushu (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-3] Investigation and Mitigation of Work-Function Variation for III-V Heterojunction Tunnel FET

C.W. Hsu¹, M.L. Fan¹, P. Su¹ (1.NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-4] High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

L.L. Huang¹, D.D. Han¹, Z.F. Chen^1,2, Y.Y. Cong¹, J. Wu^1,2, N.N. Zhao^1,2, J.C. Dong^1,2, F.L. Zhao^1,2, L.F. Liu¹, S.D. Zhang², X. Zhang¹, Y. Wang¹ (1.Inst. of Microelectronics, Peking Univ., 2.Shenzhen Graduate School, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (441 - 450)

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