[J-4-1] n⁺/p⁺-Single Doping Effects on Impurity Band Structure Modulation in Two Dimensional Si Layers

T. Mizuno¹, Y. Nakahara¹, Y. Nagamine¹, Y. Suzuki¹, Y. Nagata¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ., 2.Tokyo Univ. of Agric. and Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-4-2] Mobility Model for Advanced SOI-MOSFETs Including Back-Gate Contribution

H. Zenitani¹, H. Miyamoto¹, H. Kikuchihara¹, U. Feldmann¹, H.J. Mattausch¹, M. Miura-Mattausch¹ (1.Hiroshima Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-4-3] On the Importance of Electron-electron Scattering for Hot-carrier Degradation

S. Tyaginov^1,2, M. Bina¹, J. Franco³, B. Kaczer³, T. Grasser³ (1.Inst. for Microelectronics, TU Wien, 2.Ioffe Physical-Technical Inst., 3.imec (Austria))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-6-1] Drive Current Performance of Inversion Mode Ge CMOS Transistors

X. Gong¹, Y.–C. Yeo¹ (1.National Univ. of Singapore (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-6-2] Strained Si_0.1Ge_0.9 on Strained-Si-on-Insulator (sSOI) pMOSFETs for Low-Power sSOI Based CMOS

K. Ikeda¹, Y. Moriyama¹, T. Irisawa¹, M. Ono¹, Y. Kamimuta¹, M. Oda¹, T. Miyaki¹, E. Kurosawa¹, T. Tezuka¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-6-3] Study of Si- and SiGe-on-Insulator Ω-gate Nanowire PMOS FETs by Low-frequency Noise Measurements

M. Koyama^1,2, M. Cassé¹, S. Barraud¹, P. Nguyen^1,3, G. Ghibaudo⁴, H. Iwai², G. Reimbold¹ (1.CEA-LETI, 2.Tokyo Tech, 3.SOITEC, 4.IMEP-LAHC (France))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-7-1] Ultra Low-Frequency Noise in Vertical MOSFETs Having Tunable Threshold Voltage Fabricated with 60 nm CMOS Technology on 300 mm Wafer Process

T. Imamoto^1,2, T. Endoh^1,2,3 (1.Graduate School of Engineering, Tohoku Univ., 2.ACCEL, JST, 3.Center for Innovative Integrated Electronic Systems, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-7-2] Comprehensive Studies on the Accuracy of Traps Characterization by Using Advanced Random Telegraph Noise Simulator

Y. Higashi¹, K. Matsuzawa¹, T. Ishihara¹ (1.Toshiba Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[J-7-3] Experiment Study on Random Telegraph Signal Noise in (110) pMOSFETS with 1nm EOT

J. Chen¹, Y. Mitani¹ (1.Toshiba Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-1-1] Polymeric Optical Devices with Printable and Flexible Electrode

Y. Ohmori¹, T. Yamamoto¹, K. Hiraoka¹, H. Kajii¹ (1.Osaka Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (231 - 240)

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