[PS-3-11] Multi-Threshold Voltages in Ultra-thin-body Devices by Asymmetric Dual-Gate Structure

^○H. Kim¹, J. Park¹, M. W. Kwon¹, S. Hwang¹, B. G. Park¹ (1.Seoul National Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-12] Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy and Concentration Ion Implantation on Random Telegraph Noise

^○T. H. Kao¹, S. J. Chang¹, Y. K. Fang¹, P. C. Huang¹, Y. K. Su¹, Y. J. Shen¹, C. Y. Wu², S. L. Wu² (1.National Cheng Kung Univ., 2.Cheng Shiu Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-13] The Limits of Applicability of the Analytic Model for Hot Carrier Degradation

^○M. Jech¹, P. Sharma¹, S. Tyaginov^1,2, F. Rudolf¹, T. Grasser¹ (1.Tech. Univ. of Vienna, 2.Ioffe Physical-Techn. Inst.(Austria))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-14] Investigation of Backgating Effect on Superlinear Onset of Output Characteristics for UTB III-V Heterojunction Tunnel FET

^○S. E. Huang¹, M. L. Fan¹, P. Su¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-15] Optimized Nanowire Diameter for III-V Homojunction and Heterojunction Gate-All-Around Tunnel FETs

^○Y. W. Wang¹, P. Su¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-16] Transmission Line Model and Transconductance Method for Layout Dependent Source Resistance Extraction in Multi-Finger MOSFETs

^○Y. Z. Lo¹, J. C. Guo¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-17] Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

^○Y. B. Zhang¹, L. Sun¹, H. Xu¹, J. W. Han¹ (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-1] Si-based Nonvolatile Field Effect Transistor using Low Temperature Process

^○Y. Miyata¹, A. Ashida¹, T. Yoshimura¹, N. Fujimura¹ (1.Osaka Prefecture Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-2] Transition Metal Complex Reaction Etching for MRAM Applications using Neutral Beam and Its Mechanism Investigated by First-Principles Calculation

^○T. Kubota¹, Y. Kikuchi^1,2, T. Nozawa², S. Samukawa^1,3 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.WPI-AIMR, Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-3] A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET

^○T. Matsuzaki¹, T. Onuki¹, S. Nagatsuka¹, H. Inoue¹, T. Ishizu¹, Y. Ieda¹, N. Yamade¹, H. Miyairi¹, M. Sakakura¹, Y. Shionoiri¹, K. Kato¹, T. Okuda¹, KoyamaJ. ¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download