Oral presentation

[11a-D10-1~10] 6.3 Oxide electronics

Wed. Mar 11, 2015 9:00 AM - 11:45 AM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-D10-1] Preparation of transparent p-type NiO films by facing-target reactive-sputtering method and their application for CdTe solar cells.

〇Yasuaki Furaya¹, Ryoichi Araki¹, Yohei Ogawa², Aikyo Hosono², Takahiro Nomoto¹, Ryosuke Ishikawa¹, Tamotsu Okamoto², Nozomu Tsuboi¹ (1.Niigata University, 2.Kisarazu National College of Technology)

9:15 AM - 9:30 AM

[11a-D10-2] Carrier concentration control of Li-doped NiO thin films by RF reactive sputtering

〇Hiroshi Nakai¹, Ryo Maeda¹, Airi Ogasawara¹, Kazuma Moriyama¹, Daisuke Kawade¹, Shigefusa Chichibu², Mutsumi Sugiyama¹ (1.Faculty of Science & Technology/RIST, Tokyo Univ. of Science, 2.IMRAM, Tohoku Univ)

9:30 AM - 9:45 AM

[11a-D10-3] Influence of sodium doping on electrical properties of thermally oxidized Cu₂O sheets

〇Toshihiro Miyata¹, Yuki Nishi¹, Tadatsugu Minami¹ (1.Kanazawa Inst. T.)

9:45 AM - 10:00 AM

[11a-D10-4] P-type sodium-doped Cu₂O based heterojunction solar cells

〇Yuki Nishi¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.OEDS R&D Center, K I T)

10:00 AM - 10:15 AM

[11a-D10-5] Evaluation of NiMgO ultraviolet photoconductor on MgO substrate fabricated by radio-frequency sputtering using composite target

〇Hiroki Nishitani¹ (1.Kansai Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[11a-D10-6] Electro-deposition and characterization of Cu₂O/GaN heterostructure

〇Yusuke Kumazaki¹, Sayaka Ohmi¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

10:45 AM - 11:00 AM

[11a-D10-7] Spectral Recovery of TiO₂ Ultrafine Particles by Soft X-ray Irradiation Observed in NEXAFS Spectra

〇Masahito Niibe¹, Keiji Sano¹, Retsuo Kawakami², Yoshitaka Nakano³ (1.Univ. Hyogo, 2.Univ. Tokushima, 3.Chubu Univ.)

11:00 AM - 11:15 AM

[11a-D10-8] Photocatalytic Decomposition of Gaseous Methanol with Iron Oxide Nanotube Arrays

Takahiro Ohta¹, 〇Kei Noda¹ (1.Keio Univ.)

11:15 AM - 11:30 AM

[11a-D10-9] Adsorption-Degradation of Organic Compounds in Liquid Phase by Photocatalyst Titanium Apatite

〇Toshihisa Anazawa¹, Masato Wakamura¹, Yoshihiko Imanaka¹, Mineharu Tsukada¹ (1.Fujitsu Labs.)

11:30 AM - 11:45 AM

[11a-D10-10] Modulation of band gap in SnO by controlling interlayer Sn-Sn lone pair interaction

〇Naoto Umezawa¹ (1.NIMS)

Oral presentation

[11p-D10-1~17] 6.3 Oxide electronics

Wed. Mar 11, 2015 1:15 PM - 5:45 PM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[11p-D10-1] [Young Scientist Presentation Award Speech] Magnetotransport at Magnetic Domain Boundary in Pyrochlore Iridate

〇Takahiro Fujita¹, Wataru Sano¹, Masaki Uchida¹, Yusuke Kozuka¹, Atushi Tsukazaki^2,³, Taka-hisa Arima^4,⁵, Masashi Kawasaki^1,⁵ (1.the Univ. of Tokyo, 2.IMR, Tohoku Univ., 3.JST-PRESTO, 4.Dept. of Adv. Mater., 5.CEMS, RIKEN)

1:30 PM - 1:45 PM

△ [11p-D10-2] Magnetic Domain Control and Local Transport Property in Pyrochlore Iridate Thin Films

〇Shohei Ogawa¹, Takahiro Fujita¹, Masaki Uchida¹, Yusuke Kozuka¹, Atsushi Tsukazaki^2,³, Taka-hisa Arima^4,⁵, Masashi Kawasaki^1,⁵ (1.Dept. of Appl. Phys., the Univ. of Tokyo, 2.IMR, Tohoku Univ., 3.JST-PRESTO, 4.Dept. of Adv. Mater. Sci., the Univ. of Tokyo, 5.CEMS, RIKEN)

1:45 PM - 2:00 PM

△ [11p-D10-3] Growth and physical properties of Sr₂CoRuO₆ double-perovskite films

〇Keisuke Watarai¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,² (1.Tokyo Tech Univ., 2.MCES)

2:00 PM - 2:15 PM

△ [11p-D10-4] Topotactic Oxidative/Reductive Synthesis of A-site Cation Ordered Perovskite YBaCo₂O_x (x = 4.5−6) Epitaxial Thin Films

〇(DC)Tsukasa Katayama¹, Akira Chikamatsu^1,², Tomoteru Fukumura^1,², Tetsuya Hasegawa^1,^2,³ (1.Univ. of Tokyo, 2.JST-CREST, 3.KAST)

2:15 PM - 2:30 PM

△ [11p-D10-5] Carrier Type Control of Spinel Ferrite (Fe,Ti)₃O₄ Thin Films

〇Hiroyasu Yamahara¹, Masaki Adachi¹, Masanao Takahashi¹, Munetoshi Seki¹, Koji Horiba², Hiroshi Kumigashira², Hitoshi Tabata¹ (1.Univ. of Tokyo, 2.KEK-PF)

2:30 PM - 2:45 PM

△ [11p-D10-6] Molecular beam epitaxy of transition-metal-oxide thin films using phthalocyanine-based metalorganics

〇Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi^1,² (1.Tohoku Univ., 2.JST-PRESTO)

2:45 PM - 3:00 PM

△ [11p-D10-7] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

〇Ryo Kawabe¹, Hajime Hojo¹, Hajime Yamamoto¹, Keisuke Shimizu¹, Ko Mibu², Masaki Azuma¹ (1.Tokyo Tech., 2.Nagoya Tech.)

3:00 PM - 3:15 PM

△ [11p-D10-8] Epitaxial growth and electrical properties of Ca_xSm_1-xTiO₃ films

〇(B)Hirokazu Okabe¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,² (1.Tokyo Tech., 2.Material Research Center for Element Strategy)

3:15 PM - 3:30 PM

△ [11p-D10-9] Anomalous Hall Effect in High-mobility Eu_1-xLa_xTiO₃ Thin Films Fabricated by Metal Organic Gas-Source Molecular Beam Epitaxy

〇(M2C)Tomoki Murata¹, Kei S. Takahashi², Yuya Matsubara^2,³, Masaki Uchida¹, Yusuke Kozuka¹, Masashi Kawasaki^1,² (1.Dept. of Appl. Phys., Univ. of Tokyo, 2.RIKEN CEMS, 3.IMR, Tohoku Univ)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[11p-D10-10] Formation of NdIG thin films grown by a pulsed laser deposition and their magnetic properties

〇Hidekazu Nasu¹, Masaki Adachi¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

4:00 PM - 4:15 PM

[11p-D10-11] Epitaxial Growth of P-Type Transparent Oxide Semiconductor Si:FeO

〇Munetoshi Seki¹, Shahmohammadi Amin¹, Masanao Takahashi¹, Masaki Adachi¹, Hidekazu Nasu¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

4:15 PM - 4:30 PM

[11p-D10-12] Re-entrant cluster glass properties of Lu₃Fe_5-2xCo_xSi_xO₁₂ thin films

〇Masaki Adachi¹, Hidekazu Nasu¹, HIroyasu Yamahara¹, Munetoshi Seki¹, Hiroaki Matsui¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

4:30 PM - 4:45 PM

[11p-D10-13] Fabrication and characterization of SrRu_0.5Cr_0.5O₃ epitaxial thin films

〇keisuke yamada¹, akira chikamatsu^1,², kei shigematsu¹, tomoteru fukumura^1,², tetsuya hasegawa^1,^2,³ (1.Univ. of Tokyo, 2.JST-CREST, 3.KAST)

4:45 PM - 5:00 PM

[11p-D10-14] Magnetic Properties of Ferromagnetic Metal/r-oriented Cr₂O₃ Multilayer

〇Takashi Sumida¹, Kosuke Hashimoto¹, Takumi Nakamura¹, Yuta Watabe¹, Tomoko Nagata¹, Koichi Takase¹, Hiroshi Yamamoto¹, Nobuyuki Iwata¹ (1.CST Nihon Univ.)

5:00 PM - 5:15 PM

[11p-D10-15] Crystal Structure and Electric/Magnetic Properties of BiFe_1-xMn_xO₃ Pseudo-Perovskite Related-Single Layers and Superlattices

〇Takaaki Inaba¹, Yuta Watabe¹, Keisuke Oshima¹, Takahiro Oikawa¹, Chun Wang¹, Huaping Song¹, Tomoko Nagata¹, Takuya Hashimoto², Kouichi Takase¹, Hiroshi Yamamoto¹, Nobuyuki Iwata¹ (1.CST Nihon Univ., 2.CHS Nihon Univ.)

5:15 PM - 5:30 PM

[11p-D10-16] Interface Bonding Prediction System: InterChemBond

〇Michiko Yoshitake¹ (1.NIMS)

5:30 PM - 5:45 PM

[11p-D10-17] Synthesis of LaMnO₃ thin films by Metal Organic Deposition (MOD) method and their electrical conduction properties

〇Miku Yumoto¹, Kazu Makino¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tetsuo Shimizu³ (1.Konan Univ., 2.Osaka Univ., 3.AIST)

Oral presentation

[12a-D10-1~10] 6.3 Oxide electronics

Thu. Mar 12, 2015 9:00 AM - 11:45 AM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-D10-1] Ultrafast Ion Intercalation in Nickel Hexacyanoferrate

〇(PC)Takayuki Shibata¹, Jun Hamaguchi¹, Yutaka Moritomo^1,² (1.Univ. of Tsukuba, 2.CiRfSE, Univ. of Tsukuba)

9:15 AM - 9:30 AM

[12a-D10-2] Rate dependence of discharge curve in P2-type Na_xCoO₂ thin film

〇ayumu yanagita¹, takayuki shibata¹, wataru kobayashi^1,², yutaka moritomo^1,² (1.Tsukuba Univ., 2.CiRfSE. Univ. of Tsukuba)

9:30 AM - 9:45 AM

[12a-D10-3] Li ion conduction properties at electrolyte/electrode interface for all-solid-state batteries

〇Susumu Shiraki¹, Masakazu Haruta², Toru Suzuki¹, Yoshitaka Takagi¹, Ryota Shimizu¹, Taro Hitosugi¹ (1.Tohoku Univ., 2.Doshisha Univ.)

9:45 AM - 10:00 AM

△ [12a-D10-4] Oxygen ion conductions near room temperature in an oxide heterointerface

〇Kei Hirai¹, Daisuke Kan¹, Noriya Ichikawa¹, Ryotaro Aso¹, Hiroki Kurata^1,², Yuichi Shimakawa^1,² (1.ICR, Kyoto Univ., 2.JST-CREST)

10:00 AM - 10:15 AM

△ [12a-D10-5] Electrical characteristics of InSiO-based channel materials by co-sputtering method

〇(M1)Kazunori Kurishima^1,², Toshihide Nabatame², Nobuhiko Mitoma², Takio Kizu², Kazuhito Tsukagoshi², Tomomi Sawada², Akihiko Ohi², Ippei Yamamoto^2,³, Tomoji Ohishi³, Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA, 3.Shibaura Inst.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [12a-D10-6] Fabrication of High-mobility β-Ga₂O₃ (201) Single Crystal Schottky Barrier Diodes

〇(B)Yuta Koga¹, Kazuya Harada¹, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Saga Univ.)

10:45 AM - 11:00 AM

△ [12a-D10-7] Fabrication of pin solar cells utilizing ZnInON with a wide bandgap as the intrinsic layer

〇Kouichi Matsushima¹, Ryota Shimizu¹, Tomoaki Ide¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,² (1.Kyushu Univ., 2.JST-PRESTO)

11:00 AM - 11:15 AM

△ [12a-D10-8] Characterization of orientation-controlled α-Fe₂O₃ films using impedance measurement

〇(D)Hisanori Mashiko¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,² (1.Tokyo Tech., 2.MCES)

11:15 AM - 11:30 AM

△ [12a-D10-9] Optical and Electrical Properties of α-PbO/SrTiO₃ Epitaxial Heterostructures Fabricated by Pulsed Laser Deposition

〇Eishi Majima¹, Yusuke Kozuka¹, Masaki Uchida¹, Masashi Kawasaki^1,² (1.Dept. Appl. Phys., the Univ. of Tokyo, 2.RIKEN CEMS)

11:30 AM - 11:45 AM

[12a-D10-10] Surface-termination-dependence in ferroelectric resistive switching

〇Hiroyuki Yamada^1,², Atsushi Tsurumaki-Fukuchi¹, Masaki Kobayashi³, Takuro Nagai⁴, Yoshikiyo Toyosaki¹, Hiroshi Kumigashira³, Akihito Sawa¹ (1.AIST, 2.JST PRESTO, 3.KEK, 4.NIMS)

Oral presentation

[13a-D10-1~10] 6.3 Oxide electronics

Fri. Mar 13, 2015 9:00 AM - 11:45 AM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-D10-1] Carrier Accumulation Process in Ion-gated SrTiO₃

〇Sunao Shimizu¹, Shimpei Ono^1,², Takafumi Hatano³, Yoshihiro Iwasa^1,⁴, Yoshinori Tokura^1,⁴ (1.RIKEN CEMS, 2.CRIEPI, 3.Nagoya Univ., 4.Univ. of Tokyo)

9:15 AM - 9:30 AM

△ [13a-D10-2] Electric field induced metal-insulator transition in SrTiO₃ with various electrolytes

〇Yohei Sato¹, Kiyomasa Doi¹, Kazunori Ueno¹ (1.Univ. Tokyo)

9:30 AM - 9:45 AM

▲ [13a-D10-3] Electrostatic Carrier Doping to KTaO₃ Using Organic Parylene-C/High-k Oxide Hybrid Gate Insulator

〇TINGTING WEI^1,², Kohei Fujiwara¹, Hidekazu Takana¹ (1.ISIR Osaka Univ., 2.Kunming Sci Tech Univ)

9:45 AM - 10:00 AM

△ [13a-D10-4] Fabrication and Carrier-doping of Perovskite-type WO₃ Thin Films

〇SHINICHI NISHIHAYA¹, MASAKI UCHIDA¹, YUSUKE KOZUKA¹, YOSHIHIRO IWASA^1,², MASASHI KAWASAKI^1,² (1.the Univ. of Tokyo, 2.CEMS, RIKEN)

10:00 AM - 10:15 AM

△ [13a-D10-5] Metallic conductivity of WO₃ epitaxial thin film using electrochemical Li intercalation

〇Takuto Soma¹, Kohei Yoshimatsu¹, Mifuyu Niwa¹, Takayoshi Oshima¹, Akira Ohtomo^1,² (1.Tokyo Tech., 2.Material Research Center for Element Strategy)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[13a-D10-6] Solid-State Electrochromic WO₃ Thin Film Transistor

〇Misako Hirono¹, Takayoshi Katase², Hiromichi Ohta² (1.Hokkaido Univ., 2.RIES-Hokkaido Univ.)

10:45 AM - 11:00 AM

[13a-D10-7] Solid-State Ferromagnetic SrCoO_3-d Thin Film Transistor

〇Yuki Suzuki¹, Takayoshi Katase², Hiromichi Ohta² (1.Hokkaido Univ., 2.RIES-Hokkaido Univ.)

11:00 AM - 11:15 AM

[13a-D10-8] Time and spatial evolution analysis of hydrogen ion intercalation and diffusion in VO₂ nanowires with side gate-type FET structures

〇(M2)Tsubasa Sasaki¹, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ.)

11:15 AM - 11:30 AM

[13a-D10-9] Operation Mechanism of VO₂ Mott Transistors with A TiO₂ Solid-State Gate Insulator

〇Takeaki Yajima^1,², Tomonori Nishimura^1,², Akira Toriumi^1,² (1.Univ. of Tokyo, 2.JST-CREST)

11:30 AM - 11:45 AM

[13a-D10-10] Electrical transport and optical properties of LaVO_xN_y epitaxial thin films

〇Masahito Sano^1,³, Yasushi Hirose^1,^2,³, Shoichiro Nakao^2,³, Tomoteru Fukumura^1,^2,³, Tetsuya Hasegawa^1,^2,³ (1.Univ. of Tokyo, 2.JST-CREST, 3.KAST)

Poster presentation

[13p-P5-1~16] 6.3 Oxide electronics

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P5 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

[13p-P5-1] Pulsed laser deposition of SrTiO₃ films at low substrate temperature

〇Ryusuke Ishikawa¹, Yuta Wada¹, Takaki Onozato¹, Motonori Nakamura¹, Koji Takamura¹ (1.NIT,Asahikawa College)

4:30 PM - 6:30 PM

[13p-P5-2] Application of Ultrathin Ta₂O₅ Film to Resistive Switching Memory

〇Takeo Ohno^1,², Seiji Samukawa^1,³ (1.WPI-AIMR, Tohoku Univ., 2.PRESTO, JST, 3.IFS, Tohoku Univ.)

4:30 PM - 6:30 PM

[13p-P5-3] The Formation of WO₃ Using Microwave Excited Plasma and Its Application to Resistive Random Access Memory

〇(M1)shota takagi¹, tetsuji arai¹, keisuke arimoto¹, jyunji yamanaka¹, kiyokazu nakagawa¹, takamatsu toshiyuki² (1.Univ. of Yamanashi, 2.SST Inc)

4:30 PM - 6:30 PM

[13p-P5-4] Formative Mechanism of Conducting Path in Resistive Random Access Memory ~ First-Principles Electronic State Analysis for Various NiO Surfaces ~

〇(D)Takumi Moriyama^1,⁴, Takahiro Yamasaki², Takahisa Ohno^2,³, Satoru Kishida^1,⁴, Kentaro Kinoshita^1,⁴ (1.Tottori Univ., 2.NIMS, 3.IIS, Univ. of Tokyo, 4.TiFREC)

4:30 PM - 6:30 PM

[13p-P5-5] Fabrication and evaluation of transparent solar cells

〇kazuya satou¹, tatunori yamaguti¹, sangcheol kim¹, syuzi komuro², xinwei zhao¹ (1.Tokyo Univ. of Science, 2.Toyo Univ.)

4:30 PM - 6:30 PM

[13p-P5-6] Crystallinity and Resistivity of IrO₂ Thin Films

〇Xiuyi Hou¹, Ryota Takahashi¹, Mikk Lippmaa¹ (1.ISSP, The Univ. of Tokyo)

4:30 PM - 6:30 PM

[13p-P5-7] Observation of Joule Heating in ReRAM

〇Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.NAIST)

4:30 PM - 6:30 PM

[13p-P5-8] p-Cu₂O/AlO_x/n-SiC-pn-Diode-Structured Resistive Nonvolatile Memory

〇Misa Tsuchiya¹, Atsushi Yamashita¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol.)

4:30 PM - 6:30 PM

[13p-P5-9] Au/CuO_x/NiO_x/n-Si two-metal-oxide-layer-structured resistive nonvolatile memory

〇Hiroya Iwasa¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol.)

4:30 PM - 6:30 PM

[13p-P5-10] Lithography Process using Pt-supported TiO₂ Hybrid Thin Film: II

Kousuke Inooka¹, 〇Atsushi Maeda¹, Atsunori Matsuda² (1.OPUCT, 2.TUT)

4:30 PM - 6:30 PM

[13p-P5-11] Fabrication of Ga-doped ZnO thin films for transparent solar cells

〇SangCheol Kim¹, Tatsunori Yagaguchi¹, Shuji Komuro², Zhao Xinwei¹ (1.Tokyo Univ of Sci, 2.Toyo Univ.)

4:30 PM - 6:30 PM

[13p-P5-12] Photovoltaic Properties of Inverse Opal TiO₂ Electrode Adsorbed with CdSe Quantum Dots - Dependence of the Period of Inverse Opal TiO₂ -

〇(B)Motoki Hironaka¹, Jin Chang^1,³, Masaya Akimoto¹, Taro Toyoda^1,³, Yuhei Ogomi^2,³, Shuzi Hayase^2,³, Qing Shen^1,³ (1.Univ. of Electro-Commun., 2.Kyushu Inst. Tec., 3.JST CREST)

4:30 PM - 6:30 PM

[13p-P5-13] Preparation and Characterization of Single-Crystalline TiO₂ Nanorod Electrodes by Hydrothermal Method for Sensitized Solar Cell Applications

〇(B)Satoshi Kaji¹, Jin Chang^1,³, Masaya Akimoto¹, Taro Toyoda^1,³, Yuhei Ogomi^2,³, Shuzi Hayase^2,³, Qing Shen^1,³ (1.Univ. Electro-Commun., 2.Kyushu Inst. Tech., 3.JST CREST)

4:30 PM - 6:30 PM

[13p-P5-14] Structure of porous-Cu_xO/polypyrrole composite film and its application to photorechargeable battery

〇(M1C)daiki maeda¹, teruaki nomiyama¹, yuji horie¹ (1.Kagoshima univ.)

4:30 PM - 6:30 PM

[13p-P5-15] Structural dependence of the electronic structures of perovskite oxynitride photocatalysts ATaO₂N(A = Ca, Mg)

〇(M2)Ayako Kubo¹, Giacomo Giorgi¹, Koichi Yamashita^1,² (1.Univ. of Tokyo, 2.JST-CREST)

4:30 PM - 6:30 PM

[13p-P5-16] Observation of the Fe₃O₄ dewetting

〇Daiki Shono¹, Ryota Takahashi¹, Aomi Onuma², Shingo Maruyama², Yuji Matsumoto², Solmaz Jahangir³, Valanoor Nagarajan³, Mikk Lippmaa¹ (1.ISSP, Univ. Tokyo, 2.Univ. Tohoku, 3.UNSW)

Oral presentation

[13p-D10-1~10] 6.3 Oxide electronics

Fri. Mar 13, 2015 4:30 PM - 7:00 PM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:30 PM - 4:45 PM

[13p-D10-1] Barrier height control at Pt/anatase TiO₂ Schottky junctions using oxide dipole layers

〇YASUYUKI HIKITA¹, TAKASHI TACHIKAWA^1,², MAKOTO MINOHARA^1,³, CHRISTOPHER BELL^1,⁴, HAROLD HWANG^1,⁵ (1.SLAC, 2.The Univ. of Tokyo, 3.KEK, 4.Univ. of Bristol, 5.Stanford Univ.)

4:45 PM - 5:00 PM

△ [13p-D10-2] Control of contact resistance across transition metal / Nb:SrTiO₃ interfaces for potential spintronics applications

〇(D)Hisashi Inoue¹, Adrian Swartz¹, Takashi Tachikawa^2,³, Yasuyuki Hikita², Harold Hwang^1,² (1.Stanford Univ., 2.SLAC National Accelerator Lab., 3.The Univ. of Tokyo)

5:00 PM - 5:15 PM

[13p-D10-3] Potential Fluctuation of Strongly Correlated Oxides Induced by Interface Dipole

〇Enju Sakai¹, Horiba Koji¹, Kobayashi Masaki¹, Minohara Makoto¹, Kitamura Miho¹, Kumigashira Hiroshi¹ (1.KEK-PF)

5:15 PM - 5:30 PM

△ [13p-D10-4] Charge transfer at the heterointerface between perovskite oxides LaMnO₃ and LaNiO₃

〇(DC)MIHO KITAMURA^1,², KOJI HORIBA², MASAKI KOBAYASHI², ENJU SAKAI², MAKOTO MINOHARA², TAICHI MITSUHASHI², ASTUSHI FUJIMORI³, HIROSHI FUJIOKA¹, HIROSHI KUMIGASHIRA² (1.The Univ. of Tokyo, 2.KEK-PF, 3.Univ. of Tokyo)

5:30 PM - 5:45 PM

△ [13p-D10-5] Synthesis of Single-crystalline Thin Films of a New Compound ([Bi₂O₂]_pRhO₂) by Pulsed Laser Deposition

〇Kenta Ohba¹, Masaki Uchida¹, Yuki Ohuchi¹, Yusuke Kozuka¹, Masashi Kawasaki^1,² (1.the Univ. of Tokyo, 2.CEMS, RIKEN)

5:45 PM - 6:00 PM

△ [13p-D10-6] Control of the transition behavior and the appearance of characteristic growth mode in VO₂/Al₂O₃ (001) by biased sputtering

〇(D)BintiAzhan NurulHanis¹, Kunio Okimura¹, Kui Su¹, Mustapha Zaghrioui², Joe Sakai² (1.Tokai Univ., 2.GREMAN, Univ. Tours)

6:00 PM - 6:15 PM

△ [13p-D10-7] MHz band oscillations in VO₂/TiN/Si layered structure device

〇(D)Suruz Md¹, Kunio Okimura¹, Joe Sakai² (1.Tokai Univ., 2.GREMAN, Univ. Tours)

6:15 PM - 6:30 PM

[13p-D10-8] Crystal anisotropic etching of MgO substrates using H₃PO₄ solution

〇(M2)Shota Yamasaki¹, Teruo Kanki¹, Pellegrino Luca², Manca Nicola^2,³, Marre Daniele^2,³, Hidekazu Tanaka¹ (1.ISIR, 2.CNR-SPIN, 3.Genova Univ.)

6:30 PM - 6:45 PM

[13p-D10-9] Nano-structural ceramic film with high breakdown field strength by new AGD technology

〇Eiji Fuchita¹, Eiji Tokizaki¹, Eiichi Ozawa¹ (1.Fuchita Nanotech.)

6:45 PM - 7:00 PM

[13p-D10-10] Fablication of Compound Semiconductor/Oxide Heterostructure Nanowires Providing White Luminescence

〇Fumitaro Ishikawa¹, Hideaki Hibi², Naoki Yamamoto³ (1.Ehime Univ., 2.Osaka Univ., 3.Tokyo Tech.)

Oral presentation

[14a-D10-1~9] 6.3 Oxide electronics

Sat. Mar 14, 2015 9:30 AM - 11:45 AM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[14a-D10-1] Growth of O-polar, Zn-polar, a-plane and m-plane ZnO film using ion bombardment by RF bias triode sputtering

〇Ryosuke Hashimoto¹, Shinji Takayanagi¹, Takahiko Yanagitani², Mami Matsukawa¹ (1.Doshisha Univ., 2.Nagoya Inst. Tech.)

9:45 AM - 10:00 AM

[14a-D10-2] Effect of ZnO target temperature on growth of c-axis parallel oriented ZnO film in RF magnetron sputtering

〇Chihiro Takata¹, Shinji Takayanagi¹, Takahiko Yanagitani², Mami Matsukawa¹ (1.Doshisha Univ., 2.Nagoya Inst. Tech.)

10:00 AM - 10:15 AM

[14a-D10-3] Fabrication of ZnO/graphene nanocomposite and its electric properties

〇RYUJI OKUMURA¹, NAOYA TAKADA¹, TAKAMASA OKUBO¹, YUTA KONDO¹, YO ICHIKAWA¹ (1.Nagoya Inst.)

10:15 AM - 10:30 AM

[14a-D10-4] Direct growth of ZnO nanorods on graphene

〇RYUJI OKUMURA¹, NAOYA TAKADA¹, TAKAMASA OKUBO¹, YUTA KONDO¹, YO ICHIKAWA¹ (1.Nagoya Inst.)

10:30 AM - 10:45 AM

[14a-D10-5] The Origin of Residual Resistance in Low Resistance State of ReRAM

〇(D)Takumi Moriyama^1,², Yutaro Enomoto¹, Satoru Kishida^1,², Kentaro Kinoshita^1,² (1.Tottori Univ., 2.TiFREC)

10:45 AM - 11:00 AM

[14a-D10-6] The control of switching property in HfO₂-CB-RAM by the replacement of solvents –part 2-

〇(M2)Masato Yoshihara¹, Akinori Harada¹, Toshiyuki Itoh¹, Satoru Kishida^1,², Kentaro Kinoshita^1,² (1.Tottori Univ., 2.TiFREC)

11:00 AM - 11:15 AM

[14a-D10-7] Analysis for memory operation region of ReRAM using electron beam absorbed current (EBAC) method

〇Hisashi SHIMA¹, Hiroyuki AKINAGA¹ (1.NeRI, AIST)

11:15 AM - 11:30 AM

[14a-D10-8] Investigation on improvement in MOD-made BaTiO₃ film for ReRAM

〇Toshiyuki Sugie¹, Shuhei Hashimoto¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech)

11:30 AM - 11:45 AM

[14a-D10-9] Effects of Firing Atmosphere on Thin Film Characteristics of MOD-Made BaTiO₃ Thin Films for ReRAM

〇Shuhei Hashimoto¹, Toshiyuki Sugie¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech)

Oral presentation

[14p-D10-1~7] 6.3 Oxide electronics

Sat. Mar 14, 2015 1:00 PM - 2:45 PM D10 (16-305)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

▲ [14p-D10-1] Effects of the Oxide Film Density on the Resistive Switching Characteristics of Atomic Switches

〇(P)Cedric Mannequin¹, Tohru Tsuruoka¹, Tsuyoshi Hasegawa¹, Masakazu Aono¹ (1.NIMS-WPI-MANA)

1:15 PM - 1:30 PM

[14p-D10-2] Temperature Effects on the Switching Kinetics of a Polymer Electrolyte Based Atomic Switch

〇Tohru Tsuruoka¹, Saumya Mohapatra¹, Karthik Krishnan¹, Tsuyoshi Hasegawa¹, Masakazu Aono¹ (1.NIMS)

1:30 PM - 1:45 PM

△ [14p-D10-3] Resistive switching characteristics and negative differential resistance effect in AlFeO₃ epitaxial thin films

〇(M2)Yefei Han¹, Yosuke Hamasaki¹, Shintaro Yasui¹, Tomoyasu Taniyama¹, Mitsuru Itoh¹ (1.Tokyo Tech. MSL)

1:45 PM - 2:00 PM

[14p-D10-4] Effect of structural asymmetry on reset property in non-polar-type ReRAM

〇(M1)Kouhei Kimura¹, Ryosuke Koishi¹, Kouki Kawano¹, Satoru Kishida^1,², Kentaro Kinoshita^1,² (1.Tottori Univ., 2.TiFREC)

2:00 PM - 2:15 PM

△ [14p-D10-5] Analysis of filament property using a planar ReRAM

〇(M1)Yusuke Sawai¹, Sang-Gyu Koh¹, Tomohiro Aoki¹, Satoru Kisida^1,², Kentaro Kinoshita^1,² (1.Tottori Univ., 2.Tottori Univ. Integrated Frontier Research Center)

2:15 PM - 2:30 PM

△ [14p-D10-6] Temperature dependence of conductance in NiO-based ReRAM after semi-forming process

〇Hiroki Sasakura¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:30 PM - 2:45 PM

▲ [14p-D10-7] Active dislocations for resistance switching in SrTiO₃

〇JUN CHEN¹, JIANYONG LI², SHUN ITO³, SEKIGUCHI TAKASHI¹ (1.NIMS, 2.JST, 3.Tohoku Unvi.)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[11a-D10-1~10] 6.3 Oxide electronics

[11p-D10-1~17] 6.3 Oxide electronics

△ [11p-D10-2] Magnetic Domain Control and Local Transport Property in Pyrochlore Iridate Thin Films

△ [11p-D10-3] Growth and physical properties of Sr2CoRuO6 double-perovskite films

△ [11p-D10-4] Topotactic Oxidative/Reductive Synthesis of A-site Cation Ordered Perovskite YBaCo2Ox (x = 4.5−6) Epitaxial Thin Films

△ [11p-D10-5] Carrier Type Control of Spinel Ferrite (Fe,Ti)3O4 Thin Films

△ [11p-D10-6] Molecular beam epitaxy of transition-metal-oxide thin films using phthalocyanine-based metalorganics

△ [11p-D10-7] Observation of the Spin Structure Change in Multiferroic BiFe1-xCoxO3 Thin Films

△ [11p-D10-8] Epitaxial growth and electrical properties of CaxSm1-xTiO3 films

△ [11p-D10-9] Anomalous Hall Effect in High-mobility Eu1-xLaxTiO3 Thin Films Fabricated by Metal Organic Gas-Source Molecular Beam Epitaxy

[12a-D10-1~10] 6.3 Oxide electronics

△ [12a-D10-4] Oxygen ion conductions near room temperature in an oxide heterointerface

△ [12a-D10-5] Electrical characteristics of InSiO-based channel materials by co-sputtering method

△ [12a-D10-6] Fabrication of High-mobility β-Ga2O3 (201) Single Crystal Schottky Barrier Diodes

△ [12a-D10-7] Fabrication of pin solar cells utilizing ZnInON with a wide bandgap as the intrinsic layer

△ [12a-D10-8] Characterization of orientation-controlled α-Fe2O3 films using impedance measurement

△ [12a-D10-9] Optical and Electrical Properties of α-PbO/SrTiO3 Epitaxial Heterostructures Fabricated by Pulsed Laser Deposition

[13a-D10-1~10] 6.3 Oxide electronics

△ [13a-D10-2] Electric field induced metal-insulator transition in SrTiO3 with various electrolytes

▲ [13a-D10-3] Electrostatic Carrier Doping to KTaO3 Using Organic Parylene-C/High-k Oxide Hybrid Gate Insulator

△ [13a-D10-4] Fabrication and Carrier-doping of Perovskite-type WO3 Thin Films

△ [13a-D10-5] Metallic conductivity of WO3 epitaxial thin film using electrochemical Li intercalation

[13p-P5-1~16] 6.3 Oxide electronics

[13p-D10-1~10] 6.3 Oxide electronics

△ [13p-D10-2] Control of contact resistance across transition metal / Nb:SrTiO3 interfaces for potential spintronics applications

△ [13p-D10-4] Charge transfer at the heterointerface between perovskite oxides LaMnO3 and LaNiO3

△ [13p-D10-5] Synthesis of Single-crystalline Thin Films of a New Compound ([Bi2O2]pRhO2) by Pulsed Laser Deposition

△ [13p-D10-6] Control of the transition behavior and the appearance of characteristic growth mode in VO2/Al2O3 (001) by biased sputtering

△ [13p-D10-7] MHz band oscillations in VO2/TiN/Si layered structure device

[14a-D10-1~9] 6.3 Oxide electronics

[14p-D10-1~7] 6.3 Oxide electronics

▲ [14p-D10-1] Effects of the Oxide Film Density on the Resistive Switching Characteristics of Atomic Switches

△ [14p-D10-3] Resistive switching characteristics and negative differential resistance effect in AlFeO3 epitaxial thin films

△ [14p-D10-5] Analysis of filament property using a planar ReRAM

△ [14p-D10-6] Temperature dependence of conductance in NiO-based ReRAM after semi-forming process

▲ [14p-D10-7] Active dislocations for resistance switching in SrTiO3

Authentication

△ [11p-D10-3] Growth and physical properties of Sr₂CoRuO₆ double-perovskite films

△ [11p-D10-4] Topotactic Oxidative/Reductive Synthesis of A-site Cation Ordered Perovskite YBaCo₂O_x (x = 4.5−6) Epitaxial Thin Films

△ [11p-D10-5] Carrier Type Control of Spinel Ferrite (Fe,Ti)₃O₄ Thin Films

△ [11p-D10-7] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

△ [11p-D10-8] Epitaxial growth and electrical properties of Ca_xSm_1-xTiO₃ films

△ [11p-D10-9] Anomalous Hall Effect in High-mobility Eu_1-xLa_xTiO₃ Thin Films Fabricated by Metal Organic Gas-Source Molecular Beam Epitaxy

△ [12a-D10-6] Fabrication of High-mobility β-Ga₂O₃ (201) Single Crystal Schottky Barrier Diodes

△ [12a-D10-8] Characterization of orientation-controlled α-Fe₂O₃ films using impedance measurement

△ [12a-D10-9] Optical and Electrical Properties of α-PbO/SrTiO₃ Epitaxial Heterostructures Fabricated by Pulsed Laser Deposition

△ [13a-D10-2] Electric field induced metal-insulator transition in SrTiO₃ with various electrolytes

▲ [13a-D10-3] Electrostatic Carrier Doping to KTaO₃ Using Organic Parylene-C/High-k Oxide Hybrid Gate Insulator

△ [13a-D10-4] Fabrication and Carrier-doping of Perovskite-type WO₃ Thin Films

△ [13a-D10-5] Metallic conductivity of WO₃ epitaxial thin film using electrochemical Li intercalation

△ [13p-D10-2] Control of contact resistance across transition metal / Nb:SrTiO₃ interfaces for potential spintronics applications

△ [13p-D10-4] Charge transfer at the heterointerface between perovskite oxides LaMnO₃ and LaNiO₃

△ [13p-D10-5] Synthesis of Single-crystalline Thin Films of a New Compound ([Bi₂O₂]_pRhO₂) by Pulsed Laser Deposition

△ [13p-D10-6] Control of the transition behavior and the appearance of characteristic growth mode in VO₂/Al₂O₃ (001) by biased sputtering

△ [13p-D10-7] MHz band oscillations in VO₂/TiN/Si layered structure device

△ [14p-D10-3] Resistive switching characteristics and negative differential resistance effect in AlFeO₃ epitaxial thin films

▲ [14p-D10-7] Active dislocations for resistance switching in SrTiO₃