[D-5-3] Improvement on Coupling Efficiency for Passive Alignment of Stacked Multi-Fiber Tapes to a Vertical-Cavity Surface-Emitting Laser Array

Yasuhiro KOBAYASHI, Kenichi MATSUDA, Toyoji CHINO, Takayuki YOSHIDA, Kenzo HATADA (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-5-4] Multilayer Organic Light Emitting Diodes for Efficient Carrier Injection and Confinement

Dirk AMMERMANN, Achim BOHLER, Siegfried DIRR, Wolfgang KOWALSKY (1.Institut fur Hochfrequenztechnik, TU Braunschweig)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-5-5] Emission Properties of YBCO-Film Photo-Switches as THz Radiation Sources

Masahiko TANI, Masayoshi TONOUCHI, Kiyomi SAKAI, Zhen WANG, Noriaki ONODERA, Masanori HANGYO, Yoshishige MURAKAMI, Shin-ichi NAKASHIMA (1.Kansai Advanced Research Center, Communications Research Laboratory, MPT, 2.Research Center for Superconducting Materials and Electronics, Osaka University, 3.Osaka University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-1] Transport Transition from Chaotic to Regular Trajectory in Corrugation Gated Quantum Wires

Y. OCHIAI, A. W. WIDJAJA, N. SASAKI, K. YAMAMOTO, K. ISHIBASHI, J. P. BIRD, Y. AOYAGI, T. SUGANO, D. K. FERRY (1.Department of Material Science, Chiba University, 2.Nano-electronics, RIKEN, 3.Department of Electrical Engineering, Arizona State University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-2] Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes

Yozo SHIMADA, Kazuhiko HIRAKAWA (1.Institute of Industrial Science, University of Tokyo)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-3] Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by MBE

Tatsuya SAEKI, Takeharu MOTOKAWA, Takahiro KITADA, Satoshi SHIMOMURA, Akira ADACHI, Yasunori OKAMOTO, Naokatsu SANO, Satoshi HIYAMIZU (1.Faculty of Engineering Science, Osaka University, 2.Research Development Division, Nissin Electric Co. Ltd., 3.Research and Headquarters Kubota Corporation, 4.Faculty of Science, Kwansei-Gakuin University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-4] Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-Temperature H2 Annealing and MOVPE Regrowth

Shu GOTOH, Hideaki HORIKAWA (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-5] Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs

Michihiko SUHARA, Chuma NAGAO, Hidetaka HONJI, Yasuyuki MIYAMOTO, Kazuhito FURUYA, Riichiro TAKEMURA (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2.Department of Electrical and Electric Engineering, Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-6] Formation of Natural InAlAs Vertical Superlattices

Bun Lee, Jin Hong Lee, Jong-Hyeob Baek, Won Seok Han, El-Hang. Lee, Sung Won Jun, Tae-Yeon Seong (1.Electronics and Telecommunications Research Institute, 2.Department of Materials Science and Engineering and Centre for Electronic Materials Research, Kwangju Institute of Science and Technology(K-JIST))

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-5-7] Mechanisms and Growth Characteristics of Si Sub-Atomic-Layer Epitaxy from Si2H6

Yoshiyuki SUDA (1.Faculty of Technology, Tokyo University of Agriculture and Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download