[PD-4-3] A Novel LOCOS-Trench Combination Isolation Method for Maximum Chemical Mechanical Polishing(CMP) Process Window

Tai-su PARK, Moon Han PARK, Han Sin LEE, Sung Eui KIM, Yu Gyun SHIN, Ho Kyu KANG, Moon Yong LEE (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-4-4] Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process

K. Shiozawa, T. Oishi, H. Maeda, T. Murakami, K. Yasumura, Y. Abe, Y. Tokuda (1.Advanced Technology R&D Center, ULSI Laboratory, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-4-5] A Novel Shallow Trench Isolation Technique

Juing-Yi Cheng, Tan Fu Lei, Tien Sheng Chao (1.Department of Electronics Engineering and Institute of Electronics National Chiao Tung University and, 2.National Nano Device Laboratory)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-4-6] Strain Effects of Ge Islands on Si1-xGex/Si Quantum Well

Eun Soo KIM, Noritaka USAMI, Yasuhiro SHIRAKI (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-4-7] Effects of Thermal Stability of Si1-x-yGexCy Layers on Properties of Their Contacts with Aluminum

Jian MI, Ashawant GUPTA, Cary Y. YANG, Jintian ZHU, Paul K. L. YU, Patricia WARREN, Michel DUTOIT (1.Microelectronics Laboratory, Santa Clara University, 2.Department of Electrical and Computer Engineering, University of California, 3.Institute for Micro- and Optoelectronics, Department of Physics Swiss Federal Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.III-1] Metrological Applications of Single Electron Tunneling

John M. Martinis, Mark W. Keller, Neil M. Zimmerman, Andrew H. Steinbach (1.National Institute of Standards and Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.III-2] Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process

Kazuhiko MATSUMOTO, Masami ISHII, Jun-ichi SHIRAKASHI, Bartev J. VARTANIAN, James S. HARRIS (1.Electrotechnical Laboratory MITI, 2.Stanford University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.III-3] High-Temperature Operation of Al/Al2O3/Al Single-Electron Transistors

Y. Nakamura, C. D. Chen, J. S. Tsai (1.NEC Fundamental Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.III-4] Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)

Jun-ichi SHIRAKASHI, Masami ISHII, Kazuhiko MATSUMOTO Naruhisa MIURA, Makoto KONAGAI (1.Electrotechnical Laboratory (ETL), 2.Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.III-5] Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas

Seiya KASAI, Kei-ichiroh JINUSHI, Hiroshi OKADA, Hidemasa TOMOZAWA, Tamotsu HASHIZUME, Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF Download