[B-3-4] High Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO2 Formed in the SiCl4-N2O System

T. Ogata, K. Kobayashi, H. Watanabe, H. Kurokawa, Y. Matsui, M. Hirayama (1.ULSI Laboratory, Mitsubishi Electric Corporation, 2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-3-5] Impact of Nitrogen Distribution in Oxynitride Tunnel Film/Si on Band-to-Band Tunneling Current and Electron Injection in Flash Memory

T. Arakawa, R. Matsumoto, T. Hayashi (1.VLSI Research & Development Center and LSI Process Technology Division Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Hole Trapping Due to Impurities in Amorphous Silicon Dioxide

Chioko KANETA (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy

Josep L. ALAY, Masataka HIROSE (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface

I. Mizushima, H. Kamiya, N. Arai, M. Sonoda, M. Yoshiki, S. Takagi, M. Wakamiya, S. Kambayashi, Y. Mikata, S. Mori, M. Kashiwagi (1.Microelectronics Engineering Laboratory, Semiconductor Manufacturing Engineering Center, R&D Center, Toshiba Corporation, 2.Toshiba Microelectronics Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching

Kouichi MURAOKA, Iwao KUNISHIMA, Nobuo HAYASAKA, Shin-ichi TAKAGI (1.ULSI Research Laboratories, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Device Characteristics and Reliability of Thin Gate Dielectrics Grown by Light Wet Oxynitridation(LWO)

Moon-Sig Joo, Seok-Kiu Lee, Young-Jin Park, Jong-Choul Kim (1.Memory R&D Division, Hyundai Electronics Industries Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics

Shigehiko Saida, Yuuichirou Mitani, Hiroaki Hazama, Shigeru Kammbayashi, Ichiro Mizushima, Jun-ichi Shiozawa, Yoshio Ozawa (1.Microelectronics Engineering Laboratory and ULSI Research Laboratories Toshiba Corp.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Field Acceleration Model for Time-Dependent Dielectric Breakdown

Mikihiro KIMURA, Hiroshi KOYAMA, Akihiko YASUOKA (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Reliability of Ultra-Thin Gate Oxides Below 3 nm in the Direct Tunneling Regime

Michel Depas, Robin Degraeve, Tanya Nigam, Guido Groeseneken, Marc Heyns (1.IMEC)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (171 - 180)

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