Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation

T. Iwamatsu, T. Ipposhi, S. Miyamoto, Y. Yamaguchi, Y. Inoue, H. Miyoshi, A. Yasuoka (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.I-8] Process Technology for Reliable SOI DRAM

K-C Park, J-W Park, T-E Shim (1.Semiconductor R&D Center, Samsung Electronics Co., LTD.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.I-9] LSI Applications of 0.25-μm CMOS/SIMOX Technology

Masayuki INO, Toshiaki TSUCHIYA, Ken TAKEYA, Tetsushi SAKAI (1.NTT LSI Laboratories, NTT Electronics Technologies Ltd)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.I-10] 1-V Multigigahertz MOSFET Amplifier with an On-Chip Inductor Fabricated on a SIMOX Wafer

M. Harada, C. Yamaguchi, T. Tsuchiya (1.NTT LSI Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.I-11] A Method of Hot Carrier Lifetime Prediction in Partially-Depleted Floating SOI NMOSFETs

S. Maeda, Y. Yamaguchi, I.-J. Kim, H. O. Joachim, Y. Inoue, H. Miyoshi, A. Yasuoka (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.I-12] Velocity Overshoot and Gm Limitation in sub-0.1μm Fully-Depleted SOI-MOSFETs

Ryuji Ohba, Tomohisa Mizuno (1.Research and Development Center, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.I-13] New Electrically-Thinned Intrinsic-Channel SOI MOSFET with 0.01μm Channel Length

Tamio SHIMATANI, Sergey PIDIN, Mitsumasa KOYANAGI (1.Dept. of Machine Intelligence and System Engineering, Intelligent System Design Laboratory, Tohoku University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods

Toshiyuki YOSHIDA, Satoshi KOYANAGI, Tamotsu HASHIZUME, Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Evidence for Asymmetrical Hydrogen Profile in Thin D2O Oxidized SiO2 by SIMS and Modified TDS

Kouichi MURAOKA, Shin-ichi TAKAGI, Akira TORIUMI (1.ULSI Research Laboratories, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Effects of Electrode Materials and Annealing Ambients on the Leakage Current of TiO2 Films

S. C. Sun, T. F. Chen, T. H. Liang, F. M. Pan (1.National Nano Device Laboratory National Chiao Tung University)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (161 - 170)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Next »

▲