[A-3-4] A Study of Via-Electromigration Failure in Multilevel Interconnection with High Temperature Sputtered Aluminum

Makiko Kageyama, Keiichi Hashimoto, Hiroshi Onoda (1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Ultra-Shallow Doping for Si Sub-0.1 μm Devices

S. Matsumoto (1.Department of Electrical Engineering, Keio University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR

Yukihiro KIYOTA, Seiji SUZUKI, Taroh INADA (1.Central Research Laboratory, Hitachi Ltd., 2.College of Engineering, Hosei University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Channel Doping Engineering with Indium as an Alternative p-Type Dopant

Yeong-Taek Lee, Ki-Whan Song, Byung-Gook Park, Jong Duk Lee (1.Inter-University Semiconductor Research Center School of Electrical Engineering, Seoul Nat'l Univ.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs

Akio NISHIDA, Eiichi MURAKAMI, Shin'ichiro KIMURA (1.Central Research Laboratory, Hitachi Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] A Novel Technique for Ultrathin CoSi2 Layers: Oxide Mediated Epitaxy

Rymond T. Tung (1.Tokyo Institute of Technology, Research Center for Quantum Effect Electronics)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions

Atsuko SAKATA, Masato KOYAMA, Haruko AKUTSU, Iwao KUNISHIMA, Mitsuo KOIKE, Mitsuhiro TOMITA (1.Microelectronics Engineering Laboratory, ULSI Research Laboratories, Environmental Engineering Laboratory, TOSHIBA Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Advanced Ti Salicide Technology for High Performance Quarter-Micron Logic LSIs

Jun Suenaga, Hirofumi Sumi, Kazuhiro Tajima, Atsushi Horiuchi, Michihiro Kanno, Yutaka Okamoto (1.MOS Process dept., MOS LSI div., Semiconductor Company, Sony Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Reconditioning-Free Polish for Inter-Layer-Dielectric Planarization

K. Nakamura, S. Kishii, Y. Arimoto (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-5-5] Reliability of Low-Parasitic-Capacitance Multilevel Interconnection Using Surface-Densified Low-ε Organic Spin-on Glass

Takeshi FURUSAWA, Yoshio HOMMA (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (41 - 50)

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