[D-3-1] A New TFT-LCD with In-Plane Switching Mode of Nematic Liquid Crystals

Katsumi Kondo, Hideaki Kawakami (1.Hitachi, Ltd., Hitachi Research Laboratory, 2.Hitachi, Ltd., Electron Tube & Devices Division)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] Three-Level Charge-Pumping Technique for Grain-Boundary Trap Evaluation in Polysilicon Thin Film Transistors

Kee-Jong Kim, Ohyun Kim (1.Department of Electronic and Electrical Engineering, Pohang University of Science and Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation

Cheol-Min Park, Juhn-Suk Yoo, Byung-Hyuk Min, Dae-Kyu Moon, Min-Koo Han (1.Room 1102, School of Electrical Engineering, Seoul National University, 2.LG R&D Center)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si0.88Ge0.12 Films

Seo-Kyu Lee, Seong-Min Choe, Chang-Geun Ahn, Wook-Jin Chung, Young-Kyu Kwon, B. K. Kang, Ohyun Kim (1.Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, 2.Research Institute of Industrial Science and Technology, 3.LG Semiconductor Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[D-3-5] A Study on Fabrication of Multigate/Multichannel Polysilicon TFT

Jae-Hong Park, Chul-Ju Kim (1.School of Electronic and Electrical Engineering)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-1-1] Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface

Hiroshi NOHIRA, Yohichi OKUBE, Etsuo IIJIMA, Hiroshi YAMAMOTO, Naoto TATE, Masatake KATAYAMA, Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 2.Shin-Etsu Handotai Co. Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-1-2] Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Remote Plasma-Assisted Processing

Kwangok KOH, Hiro NIIMI, Gerald LUCOVSKY (1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-1-3] Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P+-Poly-Si Gate of PMOSFET's

T. S. Chao, C. H. Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei (1.National Nano Device Laboratories, 2.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-1-4] Theoretical Analysis of Hydrogen-Related Defects in SiO2 Thin Film by Molecular Orbital Method

Takeshi KANASHIMA, Masanori OKUYAMA, Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PD-1-5] Mechanism for Desorption of SiF4 from SiO2 Film Surface in HF Solutions

Tomoki OKU, Kazuhiko SATO, Mutsuyuki OTSUBO (1.Mitsubishi Electric Corporation Optoelectronic and Microwave Devices Laboratory)

1996 International Conference on Solid State Devices and Materials |PDF Download