[B-6-4] Mobility Limiting Factors of n-Channel Si/SiGe Modulation-Doped Systems with Varied Channel Thickness

Akie Yutani, Yasuhiro Shiraki (1.RCAST, The University of Tokyo)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Optimum Voltage Scaling and Structure Design for the Low Voltage Operation of FN Type Flash EEPROM with High Reliability and Constant Programming Time

S. Ueno, H. Oda, N. Ajika, M. Inuishi, H. Miyoshi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Investigation of ONO Layers for Application in One Time Programmable(OTP) SONOS Memories

H. Reisinger (1.Siemens Corporate Research and Development, Dep. ZFE T ME 1)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon Dioxides

Kenji OKADA (1.Micro Computer Division, Matsushita Electronics Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Spatial Distributions of Individual Traps in a Si/SiO2 Interface

Toshitsugu SAKAMOTO, Hisao KAWAURA, Toshio BABA (1.NEC Fundamental Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.II-1] Dielectric/Silicon Interface Structures and Electrical Properties

Akihiko ISHITANI (1.Association of Super-Advanced Electronic Technologies)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.II-2] The Role of Atomic Hydrogen in Degradation and Breakdown of SiO2 Films

J. H. Stathis, E. Cartier (1.IBM Research Division T. J. Watson Research Center)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.II-3] Si 2p Core-Level Shift Assignments: An Analysis of Recent Experimental and Theoretical Studies

K. Z. Zhang, L. M. Meeuwenberg, M. M. Banaszak Holl, F. R. McFeely (1.University of Michigan Chemistry Department, 2.IBM T. J. Watson Laboratory)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.II-4] Dielectric Properties of Very Thin Films of Ba0.70Sr0.30TiO3

Steve BILODEAU, Peter VAN BUSKIRK, Ralph CARL, Peter KIRLIN, Stephen STREIFFER, Cem BASCERI, Angus KINGON (1.Advanced Technology Materials Inc., 2.Dept. of Materials Science and Engineering, North Carolina State University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[Sympo.II-5] Process Integration of O3-TEOS CVD SiO2 for a Cover Film on Ferroelectric Capacitors

J. Kawahara, T. Matsuki, K. Kishimoto, K. Koyanagi, Y. Hayashi (1.Microelectronics Res. Labs., ULSI Device Development Labs., NEC Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (261 - 270)

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