[B-5-5] Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N2O-Nitrided O3-Oxide

Yasuyuki TAMURA, Satoshi OHKUBO, Toshiro NAKANISHI, Yoshikazu KATAOKA, Kiyoshi IRINO, Kanetake TAKASAKI (1.Fujitsu Laboratories Ltd., 2.FUJITSU LIMITED)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-5-6] Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing

Takeshi YOSHIDA, Seiichi MIYAZAKI, Masataka HIROSE (1.Department of Electrical Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[B-5-7] Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO2(3.5 nm)-Si Interface by the Conductance Technique

Shigeo OGAWA, Toshio KOBAYASHI, Satoshi NAKAYAMA, Yutaka SAKAKIBARA (1.NTT LSI Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures

H. Kitabayashi, T. Waho, M. Yamamoto (1.NTT LSI Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs

Colombo R. BOLOGNESI, Martin W. DVORAK, David H. CHOW (1.Compound Semiconductor Device Laboratory School of Engineering Science, and Physics Department Simon Fraser University, 2.Hughes Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well

S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, M. Inoue (1.Department of Electrical Engineering, Osaka Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Determination of Lateral Confinement Energies in AlGaAs/GaAs Split-Gate Quantum Wire Structures by Far Infrared Spectroscopy

K. YAMANAKA, S. N. WANG, K. HIRAKAWA (1.Institute of Industrial Science, University of Tokyo)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-3-5] Measurement of Semiconductor Heterojunction Band Discontinuity by Free Electron Laser

Kazuhisa NISHI, Hideaki OHYAMA, Toshiji SUZUKI, Tsuneo MITSUYU, Takio TOMIMASU (1.Free Electron Laser Research Institute, Inc.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE

Toshiki Makimoto, Hisao Saito, Naoki Kobayashi (1.NTT Basic Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Step-Free Surface Grown on GaAs (111)B Substrate by Localized Area Metalorganic Vapor Phase Epitaxy

Toshio NISHIDA, Naoki KOBAYASHI (1.NTT Basic Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF Download

298 results (181 - 190)

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