[PC-1-2] Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen

Hong-Seok CHOI, Jae-Hong JUN, Min-Koo HAN (1.School of Electrical Engineering, Seoul National University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-3] Local-Symmetry Induced Light Emission from Si/Si1-xGex/Si Quantum Wells

Yoshinobu Kimura, Kiyokazu Nakagawa, Kazumasa Takagi, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-4] Contamination-Free Physical Resist Stripping by Megasonic/IPA/Fluoride Enhanced Lift-off Processing

Takayuki JIZAIMARU, Senri OJIMA, Syunkichi OMAE, Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 2.Development DIV. Nomura Micro Science Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-5] Rapid Thermal Annealing Using the Combustion of H2 with N2O

A. Tajima, N. Takashima, Y. Sunaga, T. Sameshima (1.Tokyo A&T University)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-1] Defects in Si Thin-Film Transistors Studied by Spin-Dependent Transport

Genshiro KAWACHI, Carlos F. O. GRAEFF, Martin S. BRANDT, Martin STUTZMANN (1.Hitachi Research Laboratory, Hitachi Ltd., 2.Walter Schottky Institut, Technische Universitat Munchen)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-2] Characterization of Undoped a-Si:H by Charge Deep-Level Transient Spectroscopy

Rudolf DURNY, Vojtech NADAZDY, Ilja THURZO (1.Department of Physics, Faculty of Electrical Engineering, Slovak Technical University, 2.Institute of Physics, Slovak Academy of Sciences)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-3] Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)

Mitsutoshi MIYASAKA, Tadakazu KOMATSU, Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION Base Technology Research Center / Analysis Center)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-4] An Investigation on Stress Effect in Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization

Tae-Hyung Ihn, Byung-Il Lee, Seok-Woon Lee, Yoo-Chan Jeon, Seung-Ki Joo (1.Div. Mater. and Sci. Eng., Seoul Nat'l Univ., 2.Samsung Electron Co., 3.LG semicon Co. Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-1] High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices

T. Ukeda, T. Yamada, M. Yamanaka, C. Kudo, M. Segawa, M. Arai, M. Nishio, T. Yabu, T. Uehara, T. Nakabayashi, A. Kanda, M. Ogura (1.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., 2.Kyoto Research Laboratory, Matsushita Electronics Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-2] A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-Amorphization

Hiroaki Nakaoka, Atsushi Hori, Hiroyuki Umimoto, Akihiro Kanda (1.Semiconductor Research Center, Matsushita Electric Ind., Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download